FOD814A Fairchild Semiconductor, FOD814A Datasheet - Page 3

• Manufacturer Part Number: FOD814A
• Description: Transistor Output Optocouplers OPTO_LIGHTING
• Manufacturer: Fairchild Semiconductor

Specifications of FOD814A

• Maximum Fall Time: 18 us
• Maximum Input Diode Current: 50 mA
• Maximum Rise Time: 18 us
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: AC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 200 mV
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 150 %
• Maximum Forward Diode Voltage: 1.4 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP Black
• Number Of Elements: 1
• Forward Voltage: 1.4V
• Forward Current: 50mA
• Collector-emitter Voltage: 70V
• Package Type: PDIP-B
• Collector Current (dc) (max): 50mA
• Power Dissipation: 200mW
• Collector-emitter Saturation Voltage: 0.2V
• Fall Time: 18000ns
• Rise Time: 18000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -55C to 105C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.4
Electrical Characteristics
Individual Component Characteristics
DC Transfer Characteristics
AC Transfer Characteristics
*Typical values at T
EMITTER
DETECTOR
Symbol AC Characteristic
Symbol
V
Symbol
CE (sat)
BV
BV
CTR
I
f
CEO
t
t
C
V
C
I
r
f
CEO
ECO
R
F
t
Current Transfer
Ratio
Collector-Emitter
Saturation Voltage
Cut-Off Frequency
Response Time (Rise)
Response Time (Fall)
Characteristic
Forward Voltage
Reverse Leakage Current
Terminal Capacitance
Collector Dark Current
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
DC
A
= 25°C
Parameter
FOD817C
FOD817D
FOD814A
FOD817A
FOD817B
FOD814
FOD817
FOD814
FOD817
Device
(T
FOD814,
FOD814,
FOD814
FOD817
FOD817
Device
A
= 25°C Unless otherwise specified.)
I
I
I
I
F
F
F
F
= ±1mA, V
= 5mA, V
= ±20mA, I
= 20mA, I
V
-3dB
V
FOD814
FOD817
FOD817
FOD814
FOD817
FOD814
FOD817
FOD814
FOD817
FOD814
FOD817
Device
CE
CE
= 5V, I
= 2 V, I
Test Conditions
CE
C
Test Conditions
3
CE
C
= 1mA
C
= 5V
C
= 1mA
= 5V
= 2mA, R
I
I
V
V = 0, f = 1kHz
V = 0, f = 1kHz
V
V
I
I
I
I
= 2mA, R
Test Conditions
F
F
C
C
E
E
R
CE
CE
= ±20mA
= 20mA
= 0.1mA, I
= 0.1mA, I
= 10µA, I
= 10µA, I
(1)
= 4.0V
(1)
= 20V, I
= 20V, I
L
L
= 100 ,
F
F
= 100
F
F
F
F
= 0
= 0
= 0
= 0
= 0
= 0
(2)
Min.
70
70
6
6
Min.
Min.
130
200
300
20
50
50
80
15
Typ.*
1.2
1.2
50
30
Typ.* Max. Unit
Typ.*
0.1
0.1
80
4
3
Max.
250
250
100
100
1.4
1.4
10
Max.
www.fairchildsemi.com
300
150
600
160
260
400
600
0.2
0.2
18
18
Unit
µA
pF
nA
V
V
V
Unit
kHz
%
µs
µs
V