TCDT1102G Vishay, TCDT1102G Datasheet - Page 2

Transistor Output Optocouplers Phototransistor Out Single CTR 100-200%

TCDT1102G

Manufacturer Part Number
TCDT1102G
Description
Transistor Output Optocouplers Phototransistor Out Single CTR 100-200%
Manufacturer
Vishay
Datasheet

Specifications of TCDT1102G

Isolation Voltage
3750 Vrms
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
5 V
Output Device
Transistor
Output Type
DC
Configuration
1
Input Type
DC
Maximum Collector Emitter Voltage
32 V
Maximum Collector Emitter Saturation Voltage
300 mV
Current Transfer Ratio
125 %
Maximum Forward Diode Voltage
1.6 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP-6
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
50mA
Output Voltage
32V
Opto Case Style
DIP
No. Of Pins
6
Input Current Max
50mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TCDT1102G
Manufacturer:
TFK
Quantity:
7
Price:
1.50 USD
Notes
(1)
(2)
Note
T
Minimum and maximum values are testing requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Document Number: 83535
Rev. 1.6, 16-May-08
amb
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
Isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Junction capacitance
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector ermitter cut-off current
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to wave profile for soldering conditions for through hole devices.
amb
= 25 °C, unless otherwise specified.
= 25 °C, unless otherwise specified.
(2)
For technical questions, contact: optocoupler.answers@vishay.com
Optocoupler, Phototransistor Output
V
I
V
CE
F
CE
TEST CONDITION
V
= 10 mA, I
= 20 V, I
R
= 5 V, I
I
R
I
= 0, f = 1 MHz
E
F
I
f = 1 MHz
(1)
C
L
= 100 µA
= 50 mA
= 1 mA
= 100 Ω
F
F
2 mm from case, t ≤ 10 s
= 10 mA,
C
= 0, E = 0
t
= 1 mA
p
TEST CONDITION
/T = 0.5, t
t
p
≤ 10 µs
p
≤ 10 ms
SYMBOL
V
V
V
I
CEO
CEsat
V
C
C
CEO
ECO
f
c
F
k
j
MIN.
32
7
TCDT1100/TCDT1100G
SYMBOL
V
V
P
P
T
I
V
T
T
I
P
FSM
V
CEO
ECO
I
CM
amb
I
diss
T
diss
T
ISO
stg
C
sld
F
tot
R
j
j
Vishay Semiconductors
TYP.
1.25
200
110
0.3
50
- 55 to + 100
- 55 to + 125
VALUE
5300
100
125
100
150
125
250
260
32
50
60
5
3
7
MAX.
1.6
0.3
www.vishay.com
UNIT
V
mW
mW
mW
mA
mA
mA
°C
°C
°C
°C
°C
RMS
UNIT
V
A
V
V
kHz
nA
pF
pF
V
V
V
V
777