FOD817B Fairchild Semiconductor, FOD817B Datasheet

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FOD817B

Manufacturer Part Number
FOD817B
Description
Transistor Output Optocouplers Phototransistor Output Optocoupler
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of FOD817B

Maximum Fall Time
18 us
Maximum Input Diode Current
50 mA
Maximum Reverse Diode Voltage
6 V
Maximum Rise Time
18 us
Output Device
Transistor
Output Type
DC
Configuration
1
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
200 mV
Isolation Voltage
5000 Vrms
Current Transfer Ratio
260 %
Maximum Forward Diode Voltage
1.4 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
200 mW
Maximum Operating Temperature
+ 110 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP Black
Number Of Elements
1
Reverse Breakdown Voltage
6V
Forward Voltage
1.4V
Forward Current
50mA
Collector-emitter Voltage
70V
Package Type
PDIP-B
Collector Current (dc) (max)
50mA
Power Dissipation
200mW
Collector-emitter Saturation Voltage
0.2V
Fall Time
18000ns
Rise Time
18000ns
Pin Count
4
Mounting
Through Hole
Operating Temp Range
-55C to 110C
Operating Temperature Classification
Industrial
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
20mA
Output Voltage
70V
Opto Case Style
DIP
No. Of Pins
4
Svhc
No SVHC (15-Dec-2010)
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
FOD814 Series, FOD617 Series, FOD817 Series
4-Pin High Operating Temperature
Phototransistor Optocouplers
Features
Applications
FOD814 Series
FOD617 and FOD817 Series
Functional Block Diagram
ANODE, CATHODE
CATHODE, ANODE
AC input response (FOD814 only)
Applicable to Pb-free IR reflow soldering
Compact 4-pin package
Current transfer ratio in selected groups:
FOD617A: 40–80%
FOD617B: 63–125%
FOD617C: 100–200%
FOD617D: 160–320%
FOD814: 20–300%
FOD814A: 50–150%
C-UL, UL and VDE approved
High input-output isolation voltage of 5000Vrms
Minimum BV
Higher operating temperatures (versus H11AXXX
counterparts)
AC line monitor
Unknown polarity DC sensor
Telephone line interface
Power supply regulators
Digital logic inputs
Microprocessor inputs
CEO
1
2
of 70V guaranteed
FOD814
FOD817: 50–600%
FOD817A:80–160%
FOD817B: 130–260%
FOD817C:200–400%
FOD817D:300–600%
4
3
COLLECTOR
EMITTER
CATHODE
ANODE
1
1
2
Description
The FOD814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The FOD617/817 Series consists of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 4-pin dual in-line package.
FOD617/817
4
3 EMITTER
COLLECTOR
4
www.fairchildsemi.com
May 2006
1
tm

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FOD817B Summary of contents

Page 1

... Compact 4-pin package ■ Current transfer ratio in selected groups: FOD617A: 40–80% FOD817: 50–600% FOD617B: 63–125% FOD817A:80–160% FOD617C: 100–200% FOD817B: 130–260% FOD617D: 160–320% FOD817C:200–400% FOD814: 20–300% FOD817D:300–600% FOD814A: 50–150% ■ C-UL, UL and VDE approved ■ ...

Page 2

Absolute Maximum Ratings Symbol Parameter TOTAL DEVICE T Storage Temperature STG T Operating Temperature OPR T Lead Solder Temperature SOL P Total Power Dissipation TOT EMITTER I Continuous Forward Current F V Reverse Voltage R P Power Dissipation D Derate ...

Page 3

... FOD814A (1) FOD617A I = 10mA FOD617B FOD617C FOD617D (1) FOD617A I = 1mA FOD617B FOD617C FOD617D (1) FOD817 I = 5mA FOD817A FOD817B FOD817C FOD817D FOD814 I = ±20mA 1mA F C FOD617 I = 10mA 2.5mA F C FOD817 I = 20mA 1mA Min. Typ.* Max. – 1.2 1.4 – 1.35 1.65 – 1.2 1.4 – ...

Page 4

Transfer Characteristics (Continued) (T Symbol AC Characteristic f Cut-Off Frequency C t Response Time (Rise Response Time (Fall) f Isolation Characteristics Symbol Characteristic V Input-Output Isolation ISO (3) Voltage R Isolation Resistance ISO C Isolation Capacitance ISO *Typical ...

Page 5

Typical Electrical/Optical Characteristics Fig. 1 Collector Power Dissipation vs. Ambient Temperature (FOD814) 200 150 100 50 0 -55 -40 - 100 120 AMBIENT TEMPERATURE T Fig. 3 Collector-Emitter Saturation Voltage vs. Forward Current 6 Ic ...

Page 6

Typical Electrical/Optical Characteristics Fig. 7 Collector Current vs. Collector-Emitter Voltage (FOD814 30m AX.) 30 10m ...

Page 7

Typical Electrical/Optical Characteristics Fig. 13 Response Time vs. Load Resistance 100 Ic= 2mA Ta = 25° 0.5 0.2 0.1 0.1 0.2 0.5 1 LOAD RESISTANCE R L ...

Page 8

Package Dimensions (Through Hole) 0.200 (5.10) 0.161 (4.10) 0.157 (4.00) 0.118 (3.00) 0.130 (3.30) 0.020 (0.51) 0.091 (2.30) TYP 0.150 (3.80) 0.110 (2.80) 0.024 (0.60) 0.016 (0.40) 0.110 (2.79) 0.090 (2.29) Package Dimensions (0.4” Lead Spacing) 0.200 (5.10) 0.157 (4.00) ...

Page 9

Ordering Information Option Part Number Example S FOD814S SD FOD814SD W FOD814W 300 FOD814300 300W FOD814300W 3S FOD8143S 3SD FOD8143SD Marking Information Definitions FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5 VDE Approved, 0.4" ...

Page 10

Carrier Tape Specifications Ø1.55±0.05 Note: All dimensions are in millimeters. Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment Compartment FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0 Symbol ...

Page 11

Lead Free Recommended IR Reflow Condition Tp Tsmax Tsmin 25°C Profile Feature Preheat condition (Tsmin-Tsmax / ts) Melt soldering zone Peak temperature (Tp) Ramp-down rate Recommended Wave Soldering condition Profile Feature Peak temperature (Tp) FOD814 Series, FOD617 Series, FOD817 Series ...

Page 12

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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