TLP421(GR,J) Toshiba, TLP421(GR,J) Datasheet - Page 7

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TLP421(GR,J)

Manufacturer Part Number
TLP421(GR,J)
Description
Transistor Output Optocouplers PHOTO-TRANS W/IR 80V 5000 Vrms
Manufacturer
Toshiba
Datasheet

Specifications of TLP421(GR,J)

Forward Current
10 mA
Maximum Input Diode Current
10 mA
Maximum Reverse Diode Voltage
5 V
Output Device
Phototransistor
Configuration
1 Channel
Maximum Collector Emitter Voltage
80 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Isolation Voltage
5000 Vrms
Current Transfer Ratio
100 % to 300 %
Maximum Forward Diode Voltage
1.3 V
Minimum Forward Diode Voltage
1 V
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
DIP-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
0.0001
0.001
1000
001
100
0.1
10
20
10
10
30
1
0
3
0.1
0
0
0.2
40
Ambient temperature Ta (℃)
Collector-emitter voltage V
20
50
Sample A
Forward current I F (mA)
0.4
10
1
30
I
D
40
I
I
C
Sample B
C
20
– Ta
/I
– V
F
0.6
V CE =24 V
– I
CE
F
60
Ta = 25°C
5
0.8
10
CE
IF= 2 mA
10
5
(V)
VCE = 5V
VCE = 0.4V
80
1.0
100
100
1.2
7
0.01
100
0.1
10
80
60
40
20
1
0
0.1
0
50
30
20 15
Sample A
2
Collector-emitter voltage V
Forward current I F (mA)
1
4
I
C
I
C
– V
– I
Sample B
CE
F
6
Ta = 25°C
10
CE
IF=5mA
10
2007-10-01
(V)
VCE = 5V
VCE = 0.4V
8
TLP421
10
100

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