QRD1114 Fairchild Semiconductor, QRD1114 Datasheet - Page 2

• Manufacturer Part Number: QRD1114
• Description: Photointerruptors PHOTO TRANS
• Manufacturer: Fairchild Semiconductor

Specifications of QRD1114

• Maximum Fall Time: 50000 ns (Typ)
• Maximum Operating Temperature: + 85 C
• Maximum Rise Time: 10000 ns (Typ)
• Minimum Operating Temperature: - 40 C
• Wavelength: 940 nm
• Sensing Method: Reflective
• Output Collector Emitter Voltage (detector): 30 V
• Maximum Reverse Voltage (emitter): 5 V
• Output Device: Phototransistor
• Power Dissipation: 100 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: QRD1114_NL

©2005 Fairchild Semiconductor Corporation
QRD1113, QRD1114 Rev. 1.1.0
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Electrical/Optical Characteristics
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron tip 1/16” (1.6 mm) minimum from housing.
5. As long as leads are not under any stress or spring tension.
6. D is the distance from the sensor face to the reflective surface.
7. Crosstalk (I
8. Measured using Eastman Kodak neutral white test card with 90% diffused reflecting as a reflecting surface.
EMITTER
SENSOR
INPUT (Emitter)
OUTPUT (Sensor)
COUPLED
Symbol Parameter
V
BV
BV
I
I
CE(SAT)
C(ON)
C(ON)
I
V
I
I
CX
PE
t
t
Symbol
CEO
ECO
R
D
r
f
F
T
T
T
V
V
T
SOL-F
SOL-I
OPR
V
P
P
STG
CEO
ECO
I
F
R
D
D
Forward Voltage
Reverse Leakage Current
Peak Emission Wavelength
Collector-Emitter Breakdown
Emitter-Collector Breakdown
Dark Current
QRD1113 Collector Current
QRD1114 Collector Current
Collector Emitter Saturation
Voltage
Cross Talk
Rise Time
Fall Time
CK
) is the collector current measured with the indicated current on the input diode and with no reflective surface.
Parameter
Operating Temperature
Storage Temperature
Lead Temperature (Solder Iron)
Lead Temperature (Solder Flow)
Continuous Forward Current
Reverse Voltage
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
(1)
(1)
(T
A
I
V
I
I
I
V
I
I
I
I
= 25°C unless otherwise specified)
F
F
C
E
F
F
F
F
V
R
CE
CE
= 20mA
= 20mA
= 20mA, V
= 20mA, V
= 40mA, I
= 20mA, V
= 0.1mA
= 1mA
= 5V
(T
= 10 V, I
= 5V, R
A
= 25°C)
(2,3)
(2,3)
Test Conditions
C
L
F
CE
CE
CE
= 100µA, D = .050"
= 100 , I
= 0mA
2
= 5V, D = .050"
= 5V, D = .050"
= 5V, E
E
C(ON)
= 0
(7)
= 5mA
(6,8)
(6,8)
(6,8)
0.300
Min.
260 for 10 sec
240 for 5 sec
30
-40 to +100
5
1
-40 to +85
Rating
100
100
50
30
5
Typ.
.200
940
10
50
Max.
100
100
1.7
0.4
10
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Units
mW
mW
mA
°C
°C
°C
°C
V
V
V
Units
mA
mA
nm
µA
nA
µA
µs
µs
V
V
V
V