QVE00039 Fairchild Semiconductor, QVE00039 Datasheet - Page 3

• Manufacturer Part Number: QVE00039
• Description: Photointerruptors Phototransistor Horizontal Switch
• Manufacturer: Fairchild Semiconductor
• Type: Transmissiver

Specifications of QVE00039

• Maximum Fall Time: 50000 ns (Typ)
• Maximum Operating Temperature: + 85 C
• Maximum Rise Time: 8000 ns (Typ)
• Minimum Operating Temperature: - 40 C
• Wavelength: 940 nm
• Sensing Method: Photo Transistor
• Output Collector Emitter Voltage (detector): 30 V
• Maximum Reverse Voltage (emitter): 5 V
• Slot Width: 2.41 mm
• Aperture Width: 0.25 mm
• Output Device: Phototransistor
• Power Dissipation: 100 mW
• Number Of Elements: 1
• Gap Width: 2.41mm
• Slit Width: 0.25mm
• Reverse Breakdown Voltage: 5V
• Collector-emitter Voltage: 30V
• Forward Current: 50mA
• Fall Time: 50000ns
• Rise Time: 8000ns
• Pin Count: 4
• Mounting: Screw
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: QVE00039_NL

3 of 4
0.01
0.1
Fig. 7 Normalized Collector Current vs. Ambient Temperature
10
10
1
1
0
1
Normalized to:
V
I
T
F
CE
A
T
Normalized to:
I
V
Pulse Width = 100 µs
= 10 mA
F
A
= 25˚C
CE
-40
= 5 V
= 20 mA
= 25˚C
= 5 V
Fig. 5 Normalized Collector Current
-20
I
F
vs. Forward Current
- FORWARD CURRENT (mA)
10
0
20
40
10
10
10
1
0
-1
0
100
Normalized to:
V
T
CE
A
60
= 25˚C
I F = 20 mA
I F = 5 mA
I F = 10 mA
= 5 V
Fig. 9 Normalized Reverse Leakage Current
80
20
vs. Ambient Temperature
100
1000
40
PHOTOTRANSISTOR OPTICAL
60
1.000
0.100
0.010
0.001
3
2
1
0
0.1
Fig. 6 Collector Current vs. Collector to Emitter Voltage
Fig. 8 Normalized Collector Current vs. Shield Distance
0
Black Shield
80
+
E
INTERRUPTER SWITCH
D
+
1
d
0
2
100
3
4
1
5
QVE00039
Black Shield
I F = 30 mA
I F = 20 mA
I F = 10 mA
6
d
0
7
Normalized to
value with shield
removed
8
10
100016C
9
10