AP603-PCB2140 TriQuint, AP603-PCB2140 Datasheet - Page 9

• Manufacturer Part Number: AP603-PCB2140
• Description: RF Modules & Development Tools 2110-2170MHz Brd 12dB Gain
• Manufacturer: TriQuint

Specifications of AP603-PCB2140

• Board Size: 6 mm x 5 mm x 1 mm
• Minimum Frequency: 2.11 GHz
• Minimum Operating Temperature: - 40 C
• Supply Voltage (min): 28 V
• Product: RF Development Tools
• Maximum Frequency: 2.17 GHz
• Output Power: 7 W
• Supply Voltage (max): 80 V
• Supply Current: 246 mA
• Maximum Operating Temperature: + 85 C
• For Use With/related Products: AP603
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1067338

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com, www.TriQuint.com
Frequency
Total Output Power
Power Gain
Input Return Loss
Output Return Loss
IMD3 @ +30 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
Typical Performance at 25 °C at an
-40
-45
-50
-55
-60
-65
13
12
11
10
9
8
30
20
output power of +30 dBm
2000 MHz
2015 MHz
2025 MHz
140 mA
160 mA
180 mA
200 mA
AP603
High Dynamic Range 7W 28V HBT Amplifier
21
3 carrier TD-SCDMA, Vcc = 28V, 2015 MHz, 25 ˚C
Gain vs. Output Power vs. Frequency
32
ACLR1 vs. Output Power vs. Icq
Average Output Power (dBm)
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
22
Output Power (dBm)
2010-2025 MHz Application Circuit Performance Plots
34
23
PAR = 9.6 dB @ 0.01% prob
IQ Mod Filter : 2.1 MHz
Sample clock: 32 MHz
BW = 1.28 MHz
24
36
25
+38.2 dBm
2015 MHz
+30 dBm
230 mA
160 mA
12.3 dB
-48 dBc
15.5 %
38
+28 V
11 dB
14 dB
+5 V
2010-2025 MHz Application Circuit
26
27
40
-40
-45
-50
-55
-60
-65
-10
-15
-20
-25
-5
0
1.96
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C22 is placed at 0.185” (16.3° @ 2015 MHz) from the center of C1.
4. The center of C1 is placed at 0.705” (61.9° @ 2015 MHz) from the center of C25.
5. The center of C25 is placed at 0.140” (12.3° @ 2015 MHz) from the center of C5.
6. The center of C5 is placed at 0.125” (11.0° @ 2015 MHz) from the edge of the AP603 (U1).
7. The center of C30 is placed at 0.250” (41.2° @ 2015 MHz) from the edge of the AP603 (U1).
8. The center of C19 is placed at 0.490” (43.0° @ 2015 MHz) from the center of C23.
9. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
20
PAR = 9.6 dB @ 0.01% prob
IQ Mod Filter : 2.1 MHz
Sample clock: 32 MHz
BW = 1.28 MHz
3 carrier TD-SCDMA, Vcc = 28V, Icq = 160 mA, 2015 MHz, 25 ˚C
S11
S22
21
1.98
1.8pF
See note 3
ACLR vs. Output Power vs. Icq
Average Output Power (dBm)
5.6pF
See note 4
S11, S22 vs. Frequency
Vcc = 28V, Icq = 160 mA, 25 ˚C
22
2
Frequency (GHz)
23
2.02
24
2.04
C25
0.8pF
See note 5
25
2.06
26
ACLR1
ACLR2
2.08
See note 6
27
Specifications and information are subject to change without notice
1000pF
C7
50
40
30
20
10
0
10
8
6
4
2
0
22
20
2000 MHz
2010 MHz
2025 MHz
Efficiency vs. Output Power vs. Frequency
Efficiency vs. Output Power vs. Frequency
2010 MHz
2015 MHz
2025 MHz
21
3 carrier TD-SCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
26
Average Output Power (dBm)
22
Output Power (dBm)
23
W= 0.030”
L = 1.000”
C30
3.3pF
See note 7
30
PAR = 9.6 dB @ 0.01% prob
IQ Mod Filter : 2.1 MHz
Sample clock: 32 MHz
BW = 1.28 MHz
Page 9 of 14 May 2007 ver 1
24
0.8pF
See note 8
25
34
26
38
27