1N4448W-V-GS08 Vishay, 1N4448W-V-GS08 Datasheet - Page 3

• Manufacturer Part Number: 1N4448W-V-GS08
• Description: Diodes (General Purpose, Power, Switching) Vr/75V Io/150mA
• Manufacturer: Vishay

Specifications of 1N4448W-V-GS08

• Product: Switching Diodes
• Peak Reverse Voltage: 75 V
• Forward Continuous Current: 2 A
• Max Surge Current: 350 mA
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 620 mV to 720 mV
• Maximum Reverse Leakage Current: 5 uA
• Maximum Power Dissipation: 200 mW
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Package / Case: SOD-323
• Diode Type: Switching
• Forward Current If(av): 150mA
• Forward Voltage Vf Max: 1V
• Reverse Recovery Time Trr Max: 4ns
• Forward Surge Current Ifsm Max: 500mA
• Diode Case Style: SOD-123
• No. Of Pins: 2
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
T
Document Number 85722
Rev. 1.4, 17-Aug-10
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
amb
Figure 2. Dynamic Forward Resistance vs. Forward Current
P
18105
17438
17439
= 25 °C unless otherwise specified
tot
10
10
10
10
1000
10
10
10
10
10
1
mW
700
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600
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100
4
5
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2
2
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2
5
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2
- 1
- 2
10
0
0
-2
0
Figure 1. Forward characteristics
T
j
= 100 °C
10
-1
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I
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F
V
T
(mA)
F
j
1
100
= 25 °C
1
(V)
T
amb
T
10
f = 1 kHz
j
= 25 °C
200 °C
10
2
2
Figure 5. Leakage Current vs. Junction Temperature
Figure 4. Relative Capacitance vs. Reverse Voltage
17440
17441
10
10
10
10
1.0
0.9
0.8
0.7
1.1
1
4
5
2
3
5
2
2
5
2
5
2
[e-mail]
0
0
2
Vishay Semiconductors
T
4
j
(°C)
V
R
100
1N4448W-V
(V)
6
T
f = 1 MHz
V
j
R
= 25 °C
= 20 V
8
www.vishay.com
200
10
3