1N4148W-V-GS08 Vishay, 1N4148W-V-GS08 Datasheet - Page 2

Diodes (General Purpose, Power, Switching) 100V Io/150mA

1N4148W-V-GS08

Manufacturer Part Number
1N4148W-V-GS08
Description
Diodes (General Purpose, Power, Switching) 100V Io/150mA
Manufacturer
Vishay
Datasheets

Specifications of 1N4148W-V-GS08

Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.15 A
Max Surge Current
0.5 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
1.2 V
Maximum Reverse Leakage Current
5 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOD-123
Diode Type
Switching
Forward Current If(av)
150mA
Repetitive Reverse Voltage Vrrm Max
100V
Forward Voltage Vf Max
1.2V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
500mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1N4148W-V-GS08
Manufacturer:
VISHAY
Quantity:
51 000
Part Number:
1N4148W-V-GS08
Manufacturer:
NXP
Quantity:
1 368
Part Number:
1N4148W-V-GS08
Manufacturer:
VISHAY/威世
Quantity:
20 000
1N4148WS-V
Vishay Semiconductors
Thermal Characteristics
T
Note:
1)
Electrical Characteristics
T
Rectification Efficiency Measurement Circuit
www.vishay.com
2
Thermal resistance junction to ambient air
Junction temperature
Storage temperature
Forward voltage
Leakage current
Diode capacitance
Voltage rise when switching ON
(tested with 50 mA pulses)
Reverse recovery time
Rectification efficiency
amb
amb
Valid provided that electrodes are kept at ambient temperature.
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
17436
60 Ω
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
I
F
t
p
= 10 mA, I
Tested with 50 mA pulses,
= 0.1 µs, rise time < 30 ns,
f = 100 MHz, V
V
R
f
p
= 20 V, T
Test condition
V
= (5 to 100) kHz
I
V
R
F
I
F
V
V
F
R
V
L
= 100 mA
= V
R
R
R
= 10 mA
RF
= 100 Ω
= 100 V
Test condition
= 1 mA, V
= 20 V
= 75 V
= 2 V
R
j
= 0 V
= 150 °C
RF
= 2 V
R
= 6 V,
Symbol
C
V
V
V
ην
I
I
I
I
t
R
R
R
R
rr
F
F
D
fr
Symbol
R
T
thJA
T
stg
j
2 nF
DiodesEurope@vishay.com
Min.
0.45
5 kΩ
- 65 to + 150
Value
650
150
Typ.
1)
Document Number 85751
Max.
1000
1200
V
100
2.5
25
50
O
5
4
4
Rev. 1.8, 12-Aug-10
K/W
Unit
°C
°C
Unit
mV
mV
nA
µA
µA
µA
pF
ns
V

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