GA12SHT12-247 GeneSiC Semiconductor, GA12SHT12-247 Datasheet
GA12SHT12-247
Manufacturer Part Number
GA12SHT12-247
Description
Schottky (Diodes & Rectifiers) 1200V 12A Schottky Rectifier
Manufacturer
GeneSiC Semiconductor
Datasheet
1.GA12SHT12-247.pdf
(4 pages)
Specifications of GA12SHT12-247
Product
Schottky Diodes
Peak Reverse Voltage
1200 V
Forward Continuous Current
12 A
Forward Voltage Drop
2.27 V
Maximum Reverse Leakage Current
0.5 uA
Maximum Power Dissipation
224 W
Operating Temperature Range
- 55 C to + 225 C
Mounting Style
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
July 2010
Features
• 1200 V Schottky Rectifier
• 225
• Zero Reverse Recovery Current
• Positive temperature coefficient of V
• Temperature Independent Switching Behavior
• Lowest Figure of Merit Q
Applications
• Solar Inverter
• SMPS
• Power Factor Correction
• Motor Drives
• Induction Heating
• UPS
Advantages
• No Switching Losses
• Higher Efficiency
Maximum ratings, at T
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
i
Power dissipation
Operating and storage temperature
Electrical characteristics, at Tj = 225 °C, unless otherwise specified
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
Thermal characteristics
Thermal resistance, junction - case
Silicon Carbide Power
Schottky Diode
2
Higher Efficiency
t value
o
C Maximum Operating Temperature
Parameter
Parameter
C
j
= 225 °C, unless otherwise specified
/I
F
f
Symbol
Symbol
T
I
V
I
R
F(RMS)
I
∫i
F,max
j
P
F,SM
, T
Preliminary Datasheet
Q
V
RRM
2
I
I
t
C
thJC
F
tot
R
s
dt
F
C
stg
V
V
R
V
di
R
= 1200 V, f = 1 kHz, T
R
= 200 V, f = 1 kHz, T
F
V
/dt = 330 A/μs, T
= 3 V, f = 1 kHz, T
V
T
T
R
T
I
V
R
I
F
C
C
C
= 1200 V, T
F
R
= 12 A, T
= 1200 V, T
= 25 °C, t
= 25 °C, t
= 25 °C, t
= 12 A, T
= 950 V, I
Conditions
T
T
Conditions
T
TO-247 Package
C
C
C
1
≤ 150 °C
≤ 150 °C
= 25 °C
j
j
p
p
= 225 °C
p
= 25 °C
F
j
= 10 ms
= 10 ms
j
= 10 µs
2
= 225 °C
≤ I
= 25 °C
j
= 150 °C
F,max
j
= 25 °C
j
j
= 25 °C
= 25 °C
CASE
min.
2.15
0.1
15
-55 to 225
GA12SHT12
Values
Values
1200
< 15
2.27
6.32
0.89
typ.
224
242
tbd
tbd
tbd
0.5
tbd
12
21
20
23
45
V
I
Q
F
RRM
max.
C
= 12 A
2.6
0.7
30
= 23 nC
=1200V
Unit
°C/W
Unit
A
µA
nC
°C
pF
W
ns
V
A
A
A
A
V
2
s
1 ‐ 4
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GA12SHT12-247 Summary of contents
Page 1
... Symbol Conditions 1200 1200 950 /dt = 330 A/μ kHz 200 kHz 1200 kHz thJC Preliminary Datasheet GA12SHT12 CASE 2 Values 1200 tbd µs tbd tbd p 224 -55 to 225 Values min. typ °C 2.15 2. 225 °C 6. °C 0.1 0 225 ° ≤ F,max = 150 °C < ...
Page 2
... Figure 1: Forward Characteristics Figure 3: Power Derating July 2010 Figure 2: Reverse Characteristics Preliminary Datasheet GA12SHT12 Figure 4: Current Derating 2 ‐ 4 ...
Page 3
... Figure 5: Junction Capacitance versus Reverse Voltage Figure 7: Non-repetitive peak surge forward current versus pulse duration July 2010 Figure 6: Switching energy versus Reverse voltage Figure 8: Transient Thermal Impedance Preliminary Datasheet GA12SHT12 3 ‐ 4 ...
Page 4
... July 2010 Revision History Changes Initial release, called GA08SHT12 Rated for High temperature operation TO - 220 Package Preliminary Datasheet GA12SHT12 4 ‐ 4 ...