25TTS12PBF Vishay, 25TTS12PBF Datasheet - Page 5

• Manufacturer Part Number: 25TTS12PBF
• Description: SCRs 1200 Volt 25 Amp
• Manufacturer: Vishay

Specifications of 25TTS12PBF

• Breakover Current Ibo Max: 350 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.25 V @ 16 A
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 45 mA
• Holding Current (ih Max): 100 mA
• Mounting Style: Through Hole
• Package / Case: TO-220AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94385
0.01
100
0.1
0.1
10
10
0.0001
0.001
1
1
b)Recommended load line for
Rectangular gate pulse
a)Recommended load line for
VGD
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/ dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
IGD
1000
0.001
0.01
100
Fig. 9 - Thermal Impedance Z
10
Fig. 7 - On-state Voltage Drop Characteristics
1
0
S ingle Pulse
Instantaneous On-state Voltage (V)
Fig. 8 - Gate Characteristics
S quare Wave Pulse Duration (s)
1
Instantaneous Ga te Current (A)
25T T S .. S eries
0.01
0.1
(b)
2
T = 25°C
T = 125°C
J
J
(a)
25T T S .. S eries
3
thJC
0.1
1
Characteristics
Frequency Limited by PG(AV)
4
25TTS...PbF SAFE
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
25T T S .. S eries
5
(4)
S teady S tate Value
(DC Operation)
10
1
(3)
Bulletin I2199 rev. B 01/07
(2)
(1)
100
10
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IR
Series
5