TISP5080H3BJR-S Bourns Inc., TISP5080H3BJR-S Datasheet

Sidacs Forward Conducting Unidirectional

TISP5080H3BJR-S

Manufacturer Part Number
TISP5080H3BJR-S
Description
Sidacs Forward Conducting Unidirectional
Manufacturer
Bourns Inc.
Datasheet
1.TISP5070H3BJR.pdf (11 pages)

Specifications of TISP5080H3BJR-S

Breakover Current Ibo Max
60 A
Rated Repetitive Off-state Voltage Vdrm
65 V
Off-state Leakage Current @ Vdrm Idrm
0.005 mA
Forward Voltage Drop
3 V @ 5 A
Mounting Style
SMD/SMT
Package / Case
DO-214AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rated for International Surge Wave Shapes
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Analogue Line Card and ISDN Protection
- Analogue SLIC
- ISDN U Interface
- ISDN Power Supply
8 kV 10/700, 200 A 5/310 ITU-T K.20/21/45 rating
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
Low Voltage Overshoot under Surge
These devices are designed to limit overvoltages on the telephone and data lines. Overvoltages are normally caused by a.c. power system or
lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is
typically used for the protection of ISDN power supply feeds. Two devices, one for the Ring output and the other for the Tip output, will provide
protection for single supply analogue SLICs. A combination of three devices will give a low capacitance protector network for the 3-point
protection of ISDN lines.
The protector consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. Negative overvoltages are initially clipped by
breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-
voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current
prevents d.c. latchup as the diverted current subsides. Positive overvoltages are limited by the conduction of the anti-parallel diode.
TISP5xxxH3BJ
Insert xxx value corresponding to protection voltages of 070, 080, 110, 115 and 150.
JANUARY 1998 - REVISED JANUARY 2007
How to Order
Description
Device
Wave Shape
TISP5070H3BJ
TISP5080H3BJ
TISP5095H3BJ
TISP5110H3BJ
TISP5115H3BJ
TISP5150H3BJ
TISP5190H3BJ
Device Name
10/1000
10/160
10/700
10/560
2/10
8/20
DO-214AA/SMB)
BJ (J-Bend
Package
ITU-T K.20/21/45
GR-1089-CORE
GR-1089-CORE
ANSI C62.41
TIA-968-A
TIA-968-A
Standard
V
-120
-160
Tape Reeled
-58
-65
-75
-80
-90
DRM
Embossed
V
Carrier
TISP5xxxH3BJ Overvoltage Protector Series
TISP5xxxH3BJ
V
-110
-115
-150
-190
-70
-80
-95
(BO)
V
Order As
I
PPSM
500
300
250
200
160
100
A
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR
R-S
Marking
5xxxH3
Code
SMB Package (Top View)
Device Symbol
.............................................. UL Recognized Component
Quantity
3000
Std.
TISP5070H3BJ THRU TISP5190H3BJ
A
1
OVERVOLTAGE PROTECTORS
K
A
SD5XAD
2 K
MD5UFCAB

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TISP5080H3BJR-S Summary of contents

Page 1

Analogue Line Card and ISDN Protection - Analogue SLIC - ISDN U Interface - ISDN Power Supply 8 kV 10/700, 200 A 5/310 ITU-T K.20/21/45 rating Ion-Implanted Breakdown Region - Precise and Stable Voltage Low Voltage Overshoot under Surge V ...

Page 2

TISP5xxxH3BJ Overvoltage Protection Series Absolute Maximum Ratings Repetitive peak off-state voltage (see Note 1) Non-repetitive peak impulse current (see Notes 2, 3 and 4) 2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 8/20 µs (IEC 61000-4-5, ...

Page 3

TISP5xxxH3BJ Overvoltage Protection Series ° Electrical Characteristics Parameter I Breakover current (BO) V Forward voltage F V Peak forward recovery voltage FRM V On-state voltage T I Holding current H dv/dt Critical rate of rise of ...

Page 4

TISP5xxxH3BJ Overvoltage Protection Series Parameter Measurement Information V (BR)M V DRM - (BR) DRM V (BR) I (BO) V (BO) Quadrant III Switching Characteristic Figure 1. Voltage-Current Characteristic for Terminal Pair All Measurements are Referenced to the Thyristor ...

Page 5

TISP5xxxH3BJ Overvoltage Protection Series Typical Characteristics OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 10 1 0·1 0·01 0·001 - Junction Temperature - °C J Figure 2. ON-STATE AND FORWARD CURRENTS vs ON-STATE AND FORWARD VOLTAGES 200 ...

Page 6

TISP5xxxH3BJ Overvoltage Protection Series Typical Characteristics OFF-STATE CAPACITANCE vs OFF-STATE VOLTAGE 300 200 150 100 Negative Off-state Voltage - V D Figure 6. ...

Page 7

TISP5xxxH3BJ Overvoltage Protection Series Rating And Thermal Information V DERATING FACTOR DRM vs MINIMUM AMBIENT TEMPERATURE 1.00 0.99 0.98 0.97 0.96 0.95 0.94 0.93 -40 -35 -30 -25 -20 -15 - Minimum Ambient Temperature - °C AMIN ...

Page 8

TISP5xxxH3BJ Overvoltage Protection Series Deployment These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two points (Figure 11 multiples to limit the voltage at several points in a circuit ...

Page 9

TISP5xxxH3BJ Overvoltage Protection Series The star-connection of three TISP5xxxH3BJ protectors gives a protection circuit which has a low differential capacitance to ground (Figure 13). This example, a -100 V ISDN line is protected. In Figure 13, the circuit illustration A ...

Page 10

TISP5xxxH3BJ Overvoltage Protection Series ISDN Device Selection The ETSI Technical Report ETR 080:1993 defines several range values in terms of maximum and minimum ISDN feeding voltages. The following table shows that ranges 1 and 2 can use a TISP5110H3BJ protector ...

Page 11

TISP5xxxH3BJ Overvoltage Protection Series AC Power Testing The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature ...

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