TGF2021-08 TriQuint, TGF2021-08 Datasheet

RF GaAs DC-12GHz 8mm Pwr pHEMT (0.35um)

TGF2021-08

Manufacturer Part Number
TGF2021-08
Description
RF GaAs DC-12GHz 8mm Pwr pHEMT (0.35um)
Manufacturer
TriQuint
Datasheet

Specifications of TGF2021-08

Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
3 S
Gate-source Breakdown Voltage
- 8 V
Package / Case
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1031677

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TGF2021-08
Manufacturer:
Triquint
Quantity:
1 400
Part Number:
TGF2021-08-SG
Manufacturer:
Triquint
Quantity:
1 400
Product Description
The TriQuint TGF2021-08 is a discrete 8mm
pHEMT which operates from DC-12 GHz.
The TGF2021-08 is designed using
TriQuint’s proven standard 0.35um power
pHEMT production process.
The TGF2021-08 typically provides
> 39 dBm of saturated output power with
power gain of 11 dB. The maximum power
added efficiency is 59% which makes the
TGF2021-08 appropriate for high efficiency
applications.
The TGF2021-08 is also ideally suited for
Point-to-point Radio, High-reliability space,
and Military applications.
The TGF2021-08 has a protective surface
passivation layer providing environmental
robustness.
Lead-free and RoHS compliant
DC - 12 GHz Discrete power pHEMT
TriQuint Semiconductor: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com
Key Features and Performance
Primary Applications
35
30
25
20
15
10
Frequency Range: DC - 12 GHz
> 39 dBm Nominal Psat
59% Maximum PAE
11 dB Nominal Power Gain
Suitable for high reliability applications
8mm x 0.35μm Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 600-1000mA
(U
Chip Dimensions: 0.57 x 2.42 x 0.10 mm
5
0
0
nder RF Drive, Id rises from 600mA to 1920mA)
Point-to-point Radio
High-reliability space
Military
Base Stations
Broadband Wireless Applications
2
4
MSG
Frequency (GHz)
6
Product Datasheet
(0.022 x 0.095 x 0.004 in)
8
TGF2021-08
10
August 7, 2007
12
MAG
Rev -
14
16
1

Related parts for TGF2021-08

TGF2021-08 Summary of contents

Page 1

... GHz Discrete power pHEMT Product Description The TriQuint TGF2021- discrete 8mm pHEMT which operates from DC-12 GHz. The TGF2021-08 is designed using TriQuint’s proven standard 0.35um power pHEMT production process. The TGF2021-08 typically provides > 39 dBm of saturated output power with power gain of 11 dB. The maximum power ...

Page 2

... Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown TriQuint Semiconductor: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com TABLE I MAXIMUM RATINGS TABLE °C, Nominal Minimum Typical - 2400 - 3000 -1.35 -1 -30 - -35 - Product Datasheet August 7, 2007 TGF2021-08 Value Notes dBm 2/ See note 150 °C 4/ 320 °C -65 to 150 °C Maximum Unit - ...

Page 3

... Nominal 10V Idq = 600mA 39 0.923 ∠ 176 11.5 0.937 ∠ 173.7 TABLE IV THERMAL INFORMATION Test Conditions Idq = 600 mA Pdiss = 7.2 W Product Datasheet August 7, 2007 TGF2021- 12V UNITS Idq = 600mA 40.5 dBm 0.921 ∠ 175.4 - 39.7 dBm 0.934 ∠ 173.1 - θ ...

Page 4

... Product Datasheet August 7, 2007 TGF2021-08 L Drain Unit pHEMT cell Reference Plane Source Drain UPC Source Vd = 10V Vd = 12V UNITS Idq = 100mA Idq = 75mA 0.450 0.45 0.160 0.19 ...

Page 5

... Linear Model for 8mm pHEMT Gate Pads (8x) TriQuint Semiconductor: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com L - via = 0.0135 nH (9x UPC 7 10 UPC 6 11 UPC 5 12 UPC 4 13 UPC 3 14 UPC UPC 2 15 UPC 1 16 Product Datasheet August 7, 2007 TGF2021-08 Drain Pads (8x) 5 Rev - ...

Page 6

... Product Datasheet August 7, 2007 TGF2021-08 s12 ang s22 s22 ang deg dB deg 6.63 -2.938 -175.24 2.29 -2.874 -176.34 0.41 -2.829 -176.18 -0.81 -2.776 -175.74 -1 ...

Page 7

... DRAIN 4 13 1.081 [0.043] 0.825 [0.032 0.569 [0.022 0.313 [0.012] 0.297 [0.012] 0.096 [0.004] 18 0.000 [0.000] (Gate) 0.090 x 0.090 (0.004 x 0.004) (Vg*) 0.090 x 0.090 (0.004 x 0.004) (Vg*) 0.090 x 0.090 (0.004 x 0.004) Product Datasheet August 7, 2007 TGF2021-08 7 Rev - ...

Page 8

... Force, time, and ultrasonics are critical parameters. • Aluminum wire should not be used. • Devices with small pad sizes should be bonded with 0.0007-inch wire. • Maximum stage temperature is 200 °C. TriQuint Semiconductor: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Assembly Process Notes Product Datasheet August 7, 2007 TGF2021-08 8 Rev - ...

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