FDFME2P823ZT Fairchild Semiconductor, FDFME2P823ZT Datasheet - Page 5

• Manufacturer Part Number: FDFME2P823ZT
• Description: Various MOSFETs -20V Integrated P-Ch PwrTrnch w/Sch Diode
• Manufacturer: Fairchild Semiconductor

Specifications of FDFME2P823ZT

• Forward Transconductance Gfs (max / Min): 7 S
• Gate Charge Qg: 5.5 nC
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: P-Channel
• Package / Case: MicroFET 1.6 x 1.6 Thin
• Resistance Drain-source Rds (on): 95 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 2.3 A
• Power Dissipation: 1.3 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDFME2P823ZT Rev.C1
Typical Characteristics
Figure 11. Schottky Diode Reverse Current
0.01
0.1
4.5
3.0
1.5
0.0
10
Figure 7.
1
0.1
10
10
10
10
10
0
THIS AREA IS
LIMITED BY r
-2
-3
-4
-5
-6
SINGLE PULSE
T
R
T
I
J
A
θ
D
0
Figure 9. Forward Bias Safe
JA
= MAX RATED
= 25
= -2.3 A
= 195
-V
o
C
Gate Charge Characteristics
DS
5
o
Operating Area
C/W
, DRAIN to SOURCE VOLTAGE (V)
DS(on)
Q
V
g
R
2
, GATE CHARGE (nC)
,
1
10
REVERSE VOLTAGE (V)
V
V
DD
DD
T
T
T
= -8 V
J
J
J
= -12 V
= 125
= 100
= 25
15
T
J
V
o
= 25°C unless otherwise noted
DD
o
o
C
C
C
4
= -10 V
20
10
25
100 us
1 ms
10 ms
100 ms
1 s
10 s
DC
60
6
30
5
Figure 12. Schottky Diode Forward Voltage
0.001
1000
10
10
10
10
10
10
10
10
10
0.01
100
0.1
10
-1
-2
-3
-4
-5
-6
-7
-8
-9
0.1
5
1
Figure 10. Gate Leakage Current vs
0
0.0
Figure 8.
V
f = 1 MHz
V
DS
GS
T
= 0 V
J
= 0 V
= 125
-V
-V
3
DS
to Source Voltage
GS ,
V
0.2
, DRAIN TO SOURCE VOLTAGE (V)
F
Capacitance vs Drain
,
o
Gate to Source Voltage
GATE TO SOURCE VOLTAGE (V)
T
FORWARD VOLTAGE (mV)
C
J
= 125
T
6
J
1
o
= 25
C
0.4
o
C
T
J
= 25
9
o
C
0.6
12
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C
10
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20
15
0.8