DXT790AP5-13 Diodes Inc, DXT790AP5-13 Datasheet - Page 4
![Bipolar Power BIPOLAR TRANS,PNP 40V,3A](/photos/16/7/160792/di-5_sml.jpg)
DXT790AP5-13
Manufacturer Part Number
DXT790AP5-13
Description
Bipolar Power BIPOLAR TRANS,PNP 40V,3A
Manufacturer
Diodes Inc
Datasheet
1.DXT790AP5-13.pdf
(7 pages)
Specifications of DXT790AP5-13
Continuous Collector Current
- 3 A
Dc Collector/base Gain Hfe Min
80
Maximum Operating Frequency
100 MHz
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
PowerDI-5
Collector- Emitter Voltage Vceo Max
- 40 V
Emitter- Base Voltage Vebo
- 5 V
Maximum Dc Collector Current
- 6 A
Power Dissipation
0.74 W
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DXT790AP5-13
Manufacturer:
DIODES/美台
Quantity:
20 000
Electrical Characteristics
PowerDI is a registered trademark of Diodes Incorporated.
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 7)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
AC CHARACTERISTICS
Transition Frequency
Output Capacitance
Switching Times
Notes:
DXT790AP5
Document number: DS31800 Rev. 2 - 2
7. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.
Characteristic
@T
A
= 25°C unless otherwise specified
V
V
V
Symbol
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
BE(ON)
C
I
I
h
www.diodes.com
CBO
EBO
CES
t
t
f
obo
on
off
FE
T
4 of 7
Min
300
250
200
150
100
-50
-40
80
-5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
600
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
24
35
-1.15
-170
-350
-450
-450
Max
-1.0
800
-20
-20
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Diodes Incorporated
A Product Line of
Unit
MHz
mV
nA
nA
nA
pF
⎯
ns
ns
V
V
V
V
V
I
I
I
V
V
V
I
I
I
I
I
V
V
V
V
V
V
V
f = 50MHz
V
V
I
C
C
E
C
C
C
C
C
B1
CB
CB
EB
CE
CE
CE
CE
CE
CE
CE
CB
CC
= -100μA, I
= -0.5A, I
= -1A, I
= -3A, I
= -100μA, I
= -10mA, I
= -2A, I
= -3A, I
= I
= -5V, I
= -30V, I
= -30V, V
= -4V, I
= -2V, I
= -2V, I
= -2V, I
= -2V, I
= -2V, I
= -2V, I
= -10V, f = 1MHz
= -10V, I
B2
= -50mA
B
B
B
B
Test Condition
= -10mA
= -300mA
B
= -50mA
= -300mA
C
C
C
C
C
C
C
C
B
E
C
= -5mA
C
= 0
= -10mA
= -500mA
= -1A
= -50mA,
E
= -3A
= -2A
= -3A
BE
= 0
= 0
DXT790AP5
= -500mA,
= 0
= 0
= 0
© Diodes Incorporated
March 2010