FMMT555TA Diodes Inc, FMMT555TA Datasheet
FMMT555TA
Manufacturer Part Number
FMMT555TA
Description
Bipolar Small Signal PNP High Voltage
Manufacturer
Diodes Inc
Datasheet
1.FMMT555TA.pdf
(2 pages)
Specifications of FMMT555TA
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
SOT-23
Collector- Emitter Voltage Vceo Max
150 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 1 A
Maximum Dc Collector Current
1 A
Power Dissipation
0.5 W
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMMT555TA
Manufacturer:
ZETEX
Quantity:
4 200
Part Number:
FMMT555TA
Manufacturer:
ZETEX
Quantity:
20 000
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – AUGUST 2003
FEATURES
*
*
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
150 Volt V
1 Amp continuous current
CEO
amb
= 25°C
SYMBOL
V
V
V
I
I
V
V
V
h
f
C
CBO
EBO
T
FMMT455
555
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
3 - 131
MIN.
-160
-150
-5
50
50
100
amb
MAX
-0.1
-10
-0.1
-0.3
-1
-1
300
10
= 25°C unless otherwise stated).
s. Duty cycle
SYMBOL
V
V
V
I
I
I
P
T
CM
C
B
tot
j:
CBO
CEO
EBO
T
stg
UNIT
V
V
V
V
V
V
MHz
pF
A
A
A
2%
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
f=100MHz
V
C
C
E
C
C
C
C
C
C
-55 to +150
=-100
CB
CB
EB
CB
=-100
=-10mA*
=-100mA, I
=-100mA, I
=-10mA, V
=-300mA, V
=-50mA, V
=-100mA, V
=-4V
VALUE
FMMT555
=-140V
=-140V, T
=-10V, f=1MHz
C
-160
-150
-200
500
-5
-2
-1
A
A
SOT23
CE
CE
B
B
CE
amb
=-10mA*
=-10mA*
CE
=-10V*
=-10V
=-10V*
=-10V*
=100°C
UNIT
mW
B
mA
°C
A
A
V
V
V
E
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FMMT555TA Summary of contents
Page 1
SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 – AUGUST 2003 FEATURES * 150 Volt V CEO * 1 Amp continuous current COMPLEMENTARY TYPE – PARTMARKING DETAIL – ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak ...
Page 2
FMMT555 TYPICAL CHARACTERISTICS -0 = -0.6 -0.4 -0.2 0 -0.0001 -0.001 -0. Collector Current (Amps CE(sat) C 100 80 V =-10V -0.0001 -0.001 -0.01 I ...