2SC5242-R(Q) Toshiba, 2SC5242-R(Q) Datasheet - Page 3

• Manufacturer Part Number: 2SC5242-R(Q)
• Description: Bipolar Small Signal Transistor NPN 230V 15A
• Manufacturer: Toshiba

Specifications of 2SC5242-R(Q)

• Dc Collector/base Gain Hfe Min: 55
• Gain Bandwidth Product Ft: 30 MHz
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: 2-16C1A
• Collector- Emitter Voltage Vceo Max: 230 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 15 A
• Power Dissipation: 130 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.03
0.01
0.05
0.03
0.3
0.1
0.5
0.3
0.1
20
16
12
50
30
10
0.01
8
4
0
3
1
5
3
1
0
3
DC operation
Tc = 25°C
I C max (pulsed)*
I C max (continuous)
*: Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
−25
Tc = 25°C
800
Collector-emitter voltage V
Collector-emitter voltage V
10
2
600
100 ms*
0.1
25
Collector current I
400
Safe Operating Area
300
V
30
CE (sat)
4
I
250
C
200
Tc = 100°C
– V
10 ms*
150
1
CE
I B = 10 mA
1 ms*
100
– I
100
6
C
C
Common emitter
I C /I B = 10
Common emitter
Tc = 25°C
CE
(A)
CE
10
300
50
V CEO max
8
(V)
(V)
40
30
20
1000
100
10
3
300
100
20
16
12
30
10
0.01
8
4
0
3
1
0
Common emitter
V CE = 5 V
Common emitter
V CE = 5 V
−25
Tc = 100°C
25
0.4
Base-emitter voltage V
0.1
Tc = 100°C
Collector current I
0.8
I
h
C
FE
−25
– V
1
– I
25
BE
C
1.2
C
BE
(A)
10
(V)
1.6
2004-07-07
2SC5242
100
2.0