BCX5316TA Diodes Inc, BCX5316TA Datasheet - Page 4

• Manufacturer Part Number: BCX5316TA
• Description: Bipolar Small Signal PNP Medium Power
• Manufacturer: Diodes Inc

Specifications of BCX5316TA

• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1 W
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 6)
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Turn-On Voltage (Note 6)
Transition Frequency
Output Capacitance
Notes:
BCX 51 / 52 / 53
Datasheet Number: DS35368 Rev. 2 – 2
1.0
0.8
0.6
0.4
0.2
6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
0
0
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
1
Fig. 1 Typical Collector Current
Characteristic
vs. Collector-Emitter Voltage
2
@ T
3
I = 8mA
A
B
= 25°C unless otherwise specified
BCX51
BCX52
BCX53
BCX51
BCX52
BCX53
All versions
10 gain grp
16 gain grp
4
I = 10mA
B
I = 2mA
I = 4mA
I = 6mA
B
B
B
5
www.diodes.com
Symbol
V
V
BV
BV
BV
I
C
I
CE(sat)
BE(on)
h
CBO
EBO
f
obo
FE
CBO
CEO
EBO
T
4 of 7
-100
Min
100
150
-60
-60
-80
-45
-45
25
40
25
63
-5
-
-
-
-
-
500
400
300
200
100
0
0.001
Fig. 2 Typical DC Current Gain vs. Collector Current
T = 150°C
T = 85°C
T = 25°C
T = -55°C
A
A
A
A
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-I , COLLECTOR CURRENT (A)
0.01
C
Max
-0.1
250
160
250
-0.5
-1.0
-20
-20
25
-
-
-
-
-
-
MHz
0.1
Unit
nA
µ
pF
V
V
V
V
V
A
BCX 51 / 52 / 53
I
I
I
V
V
V
I
I
I
I
I
I
I
I
f = 100MHz
V
C
C
E
C
C
C
C
C
C
C
C
CB
CB
EB
CB
= -10µA
= -100µA
= -10mA
= -5mA, V
= -150mA, V
= -500mA, V
= -150mA, V
= -150mA, V
= -500mA, I
= -500mA, V
= -50mA, V
= -30V
= -30V, T
= -4V
= -10V, f = 1MHz
1
Test Condition
V
CE
= -5V
© Diodes Incorporated
CE
A
CE
B
CE
CE
CE
CE
CE
= 150°C
= -2V
= -50mA
= -10V
June 2011
10
= -2V
= -2V
= -2V
= -2V
= -2V