ZX5T849GTA Diodes Inc, ZX5T849GTA Datasheet - Page 2

• Manufacturer Part Number: ZX5T849GTA
• Description: Bipolar Small Signal NPN 30V
• Manufacturer: Diodes Inc

Specifications of ZX5T849GTA

• Dc Collector/base Gain Hfe Min: 20
• Gain Bandwidth Product Ft: 140 MHz
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 7 V
• Continuous Collector Current: 7 A
• Maximum Dc Collector Current: 20 A
• Power Dissipation: 3 W
• Maximum Operating Frequency: 140 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ZX5T849G
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
PARAMETER
Junction to ambient
Junction to ambient
S E M I C O N D U C T O R S
(a)
(b)
A
A
=25°C
=25°C
(a)
(a)
(b)
SYMBOL
R
R
2
SYMBOL
BV
BV
BV
I
I
P
P
T
JA
JA
C
CM
D
D
j
, T
CBO
CEO
EBO
stg
-55 to +150
VALUE
42
78
LIMIT
12.8
3.0
1.6
80
30
20
24
7
7
ISSUE 1 - NOVEMBER 2003
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
°C
W
W
V
V
V
A
A