ZXT13N20DE6TA Diodes Inc, ZXT13N20DE6TA Datasheet - Page 4

• Manufacturer Part Number: ZXT13N20DE6TA
• Description: Bipolar Small Signal 20V NPN SuperSOT4
• Manufacturer: Diodes Inc

Specifications of ZXT13N20DE6TA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SOT-23-6
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 7.5 V
• Continuous Collector Current: 4.5 A
• Maximum Dc Collector Current: 4.5 A
• Power Dissipation: 1.1 W
• Maximum Operating Frequency: 96 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ISSUE 1 - DECEMBER 1999
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
C
t
t
CBO
EBO
CES
T
(on)
(off)
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
MIN.
50
20
7.5
250
300
200
= 25°C unless otherwise stated).
15
4
TYP.
100
33
8.5
170
0.9
400
450
300
96
50
115
485
45
55
5.0
0.85
MAX.
100
100
100
75
230
1.0
0.90
900
8
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
V
V
MHz
pF
ns
ns
ZXT13N20DE6
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
V
B1
CB
EB
CES
CB
=100 A
=100 A
=10mA*
=0.1A, I
=1A, I
=4.5A, I
=4.5A, I
=4.5A, V
=10mA, V
=1A, V
=5A, V
=15A, V
=50mA, V
CC
=I
=40V
=6V
=10V, f=1MHz
=10V, I
B2
=40V
=40mA
B
CE
CE
=10mA*
B
B
B
CE
CE
=10mA*
=45mA*
=45mA*
=2V*
=2V*
C
CE
CE
=2V*
=2V*
=2A
=2V*
=10V