ZTX658 Diodes Inc, ZTX658 Datasheet
ZTX658
Manufacturer Part Number
ZTX658
Description
Bipolar Small Signal NPN Super E-Line
Manufacturer
Diodes Inc
Datasheet
1.ZTX658.pdf
(3 pages)
Specifications of ZTX658
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Package / Case
TO-92
Collector- Emitter Voltage Vceo Max
400 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
1 W
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 200 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2 – APRIL 2002
FEATURES
*
*
*
APPLICATIONS
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
400 Volt V
0.5 Amp continuous current
P
Telephone dialler circuits
tot
=1 Watt
CEO
derate above 25°C
amb
SYMBOL MIN.
V
V
V
I
I
V
V
V
h
CBO
CBO
EBO
FE
=25°C
(BR)CBO
(BR)CEO)
(BR)EBO
CE(sat)
BE(sat)
BE(on)
400
400
5
50
50
40
3-229
amb
TYP.
SYMBOL
V
V
V
I
I
P
T
CM
C
tot
j
CBO
CEO
EBO
:T
= 25°C unless otherwise stated).
stg
MAX.
100
100
100
0.3
0.25
0.5
0.9
0.9
UNIT
V
V
V
nA
nA
nA
V
V
V
V
V
-55 to +200
VALUE
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
IC=100mA, V
I
I
I
400
400
500
5.7
C
C
E
C
C
C
C
C
C
C
5
1
1
CB
CE
EB
=100 A
=100 A
=10mA*
=20mA, I
=50mA, I
=100mA, I
=100mA, I
=1mA, V
=100mA, V
=200mA, V
=320V
=4V
=320V
TO92 Compatible
ZTX658
C
B
E
E-Line
CE
B
B
=1mA
=5mA*
B
B
=5V*
CE
CE
=10mA*
=10mA*
CE
mW/ °C
=5V*
=10V*
=5V*
UNIT
mA
°C
W
V
V
V
A
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ZTX658 Summary of contents
Page 1
... C P tot stg = 25°C unless otherwise stated). amb TYP. MAX. UNIT 400 V 400 100 nA 100 nA 100 nA 0.3 V 0.25 V 0.5 V 0 3-229 ZTX658 E-Line TO92 Compatible VALUE UNIT 400 V 400 500 5.7 mW/ °C -55 to +200 °C CONDITIONS. I =100 =10mA =100 =320V CB V ...
Page 2
... ZTX658 ELECTRICAL CHARACTERISTICS (at T PARAMETER SYMBOL Transition Frequency f T Output capcitance C obo Switching times off * Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance:Junction to Ambient Junction to Ambient Junction to Case † Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. ...
Page 3
... I C 1.0 V =10V CE 0.1 D.C. 1s 100ms 10ms 0.01 1.0ms 0.001 Safe Operating Area 3-231 ZTX658 -55° = +25°C +100°C +175°C 0.01 0 Collector Current (Amps CE(sat) C -55° = +25°C +100°C +175°C 0.01 0 Collector Current (Amps) ...