DST847BPDP6-7 Diodes Inc, DST847BPDP6-7 Datasheet - Page 5

• Manufacturer Part Number: DST847BPDP6-7
• Description: Bipolar Small Signal BIPOLAR TRANS COMP
• Manufacturer: Diodes Inc

Specifications of DST847BPDP6-7

• Dc Collector/base Gain Hfe Min: 300
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SOT-963
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 100 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics – Q2 PNP Transistor
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain-Bandwidth Product
Output Capacitance
Notes:
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
4. Short duration pulse test used to minimize self-heating effect.
Characteristic (Note 4)
V
V
V
V
Symbol
V
V
V
(BR)CBO
(BR)CES
(BR)CEO
(BR)EBO
I
C
CE(sat)
BE(sat)
BE(on)
h
CBO
f
obo
FE
T
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-600
5 of 8
Min
100
200
100
-50
-50
-45
-6
-
-
-
-
-
-
-
@T
A
= 25°C unless otherwise specified
Typical
-100
-300
-760
-885
-670
-715
-8.5
340
330
340
-90
-65
-70
2.0
-
-1000
-1100
-175
-500
-780
-850
Max
470
-15
-
-
-
-
-
-
-
Unit
MHz
mV
mV
mV
nA
pF
V
V
V
V
-
I
I
I
I
V
I
I
I
I
I
I
I
I
V
f = 100MHz
V
C
C
C
E
C
C
C
C
C
C
C
C
CB
CE
CB
= -10mA, I
= -10μA, I
= -10μA, I
= -1mA, I
= -1μA, I
= -10μA, V
= -2.0mA, V
= -100mA, I
= -10mA, I
= -100mA, I
= -2.0mA, V
= -10mA, V
= -30V
= -5V, I
= -10V, f = 1.0MHz
DST847BPDP6
Test Condition
C
B
C
B
B
B
= 0
B
= 0
CE
= -10mA,
= 0
= 0
B
B
= -0.5mA
CE
= -0.5mA
CE
CE
= -5.0mA
= -5.0mA
= -5V
= -5V
= -5V
= -5V
© Diodes Incorporated
January 2010