ZXTN620MATA Diodes Inc, ZXTN620MATA Datasheet - Page 4

• Manufacturer Part Number: ZXTN620MATA
• Description: Bipolar Small Signal BIPOLAR TRANSISTOR NPN
• Manufacturer: Diodes Inc

Specifications of ZXTN620MATA

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: DFN2020B-3
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 7.5 V
• Continuous Collector Current: 3.5 A
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 1.5 W
• Maximum Operating Frequency: 160 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 6)
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Turn-On Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
Output Capacitance
Transition Frequency
Turn-On Time
Turn-Off Time
Notes:
ZXTN620MA
Document Number DS31894 Rev. 5 - 2
6. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
V
V
BV
BV
V
BV
I
I
CE(sat)
C
I
BE(sat)
BE(on)
h
CBO
EBO
CES
t
t
f
obo
on
off
FE
CBO
CEO
EBO
T
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Min
100
200
300
110
100
80
60
20
7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1128
0.96
1.09
11.5
Typ
180
110
450
450
170
145
160
240
160
8.2
90
30
10
15
45
86
-
-
-
1.175
Max
1.05
100
100
100
900
185
200
340
Diodes Incorporated
20
60
18
-
-
-
-
-
-
-
-
-
-
-
A Product Line of
MHz
Unit
mV
nA
 n A
nA
pF
ns
ns
V
V
V
V
V
-
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
V
V
f = 100MHz
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
EB
CE
CB
CE
CC
= 100 µA
= 100 µA
= 10 mA
= 10mA, V
= 200mA, V
= 1A, V
= 1.5A, V
= 3A, V
= 5A, V
= 0.1A, I
= 0.5A, I
= 1A, I
= 1.5A, I
= 3.5A, I
= 3.5A, V
= 3.5A, I
= I
= 80V
= 65V
= 10V. f = 1MHz
= 10V, I
= 10V, I
= 6V
B2
Test Condition
= 25mA
B
CE
CE
CE
ZXTN620MA
= 20mA
B
B
B
B
B
CE
CE
C
C
= 10mA
= 50mA
= 50mA
= 300mA
= 300mA
= 2V
= 2V
= 2V
CE
© Diodes Incorporated
= 50mA,
= 1A
CE
= 2V
= 2V
= 2V
January 2011
= 2V