NST45011MW6T1G ON Semiconductor, NST45011MW6T1G Datasheet - Page 4

• Manufacturer Part Number: NST45011MW6T1G
• Description: Bipolar Small Signal DUAL MATCHED NPN XSTR 45V
• Manufacturer: ON Semiconductor

Specifications of NST45011MW6T1G

• Dc Collector/base Gain Hfe Min: 150 at 10 uA at 5 V
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 380 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

200
100
5.0
2.0
50
10
1.0
Figure 7. Active Region Safe Operating Area
V
CE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
, COLLECTOR-EMITTER VOLTAGE (V)
5.0
T
A
= 25°C
10
T
J
1 s
= 25°C
TYPICAL CHARACTERISTICS
30
45
3 ms
http://onsemi.com
65
100
4
of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
or T
The safe operating area curves indicate I
The data of Figure 7 is based upon T
A
is variable depending upon conditions.
J(pk)
C
= 150°C; T
−V
CE
limits
C