2N5210 Central Semiconductor, 2N5210 Datasheet
2N5210
Manufacturer Part Number
2N5210
Description
Bipolar Small Signal NPN Gen Pur SS
Manufacturer
Central Semiconductor
Datasheet
1.2N5210.pdf
(2 pages)
Specifications of 2N5210
Dc Collector/base Gain Hfe Min
200 at 0.1 mA at 5 V
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Package / Case
TO-92
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
4.5 V
Continuous Collector Current
0.1 A
Power Dissipation
350 mW
Maximum Operating Frequency
30 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N5210
Manufacturer:
FAIRCHILD
Quantity:
280 000
Part Number:
2N5210
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
2N5210BU
Manufacturer:
FSC
Quantity:
24 821
Part Number:
2N5210BU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
2N5210TFR
Manufacturer:
FSC
Quantity:
16 000
DESCRIPTION
The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the
epitaxial planar process, designed for applications requiring high gain and low noise.
MAXIMUM RATINGS (T A =25°C)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Power Dissipation (T C =25°C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL CHARACTERISTICS (T A =25°C)
SYMBOL
I CBO
I EBO
BV CBO
BV CEO
V CE(SAT)
V BE(ON)
h FE
h FE
h FE
f T
C cb
h fe
NF
NF
TEST CONDITIONS
V CB =35V
V EB =3.0V
I C =100µA
I C =1.0mA
I C =10mA, I B =1.0mA
V CE =5.0V, I C =1.0mA
V CE =5.0V, I C =100µA
V CE =5.0V, I C =1.0mA
V CE =5.0V, I C =10mA
V CE =5.0V, I C =500µA, f=20MHz
V CB =5.0V, I E =0, f=100kHz
V CE =5.0V, I C =1.0mA, f=1.0kHz
V CE =5.0V, I C =20µA, R S =22k ,
f=10Hz to 15.7kHz
V CE =5.0V, I C =20µA, R S =10k , f=1.0kHz
SYMBOL
V CEO
V CBO
V EBO
T J ,T stg
(SEE REVERSE SIDE)
I C
P D
P D
JA
JC
MIN
50
50
100
150
150
150
30
2N5209
MAX
0.70
0.85
300
4.0
600
3.0
4.0
50
50
-65 to +150
NPN SILICON TRANSISTOR
4.5
350
357
125
50
50
50
1.0
TO-92 CASE
MIN
200
250
250
250
50
50
30
2N5209
2N5210
2N5210
MAX
0.70
0.85
600
900
4.0
2.0
3.0
50
50
DATA SHEET
UNITS
UNITS
°C/W
°C/W
MHz
mA
mW
nA
nA
pF
dB
dB
V
V
V
°C
W
V
V
V
V
R0
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2N5210 Summary of contents
Page 1
... DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. MAXIMUM RATINGS (T A =25°C) Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (T C =25°C) ...
Page 2
... TO-92 PACKAGE - MECHANICAL OUTLINE SYMBOL A (DIA Lead Code NPN SILICON TRANSISTOR DIMENSIONS INCHES MILLIMETERS MIN MAX MIN 0.175 0.205 4.45 B 0.170 0.210 4.32 C 0.500 - 12.70 D 0.016 0.022 0.41 E 0.100 2.54 F 0.050 1.27 G 0.125 0.165 3.18 H 0.080 0.105 2.03 I 0.015 ...