CMPT2907AE Central Semiconductor, CMPT2907AE Datasheet

CMPT2907AE

Manufacturer Part Number

CMPT2907AE

Description

Bipolar Small Signal PNP Enhanced

Manufacturer

Central Semiconductor

Datasheet

1.CMPT2907AE.pdf (2 pages)

Specifications of CMPT2907AE

Dc Collector/base Gain Hfe Min

100 at 0.1 mA at 10 V

Minimum Operating Temperature

- 65 C

Configuration

Single

Transistor Polarity

PNP

Mounting Style

SMD/SMT

Package / Case

SOT-23

Collector- Emitter Voltage Vceo Max

60 V

Emitter- Base Voltage Vebo

- 5 V

Maximum Dc Collector Current

0.6 A

Power Dissipation

350 mW

Maximum Operating Frequency

200 MHz

Maximum Operating Temperature

+ 150 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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♦

MAXIMUM RATINGS: (T A =25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)

SYMBOL

I CBO

I CEV

I EBO

BV CBO

BV CEO

BV EBO

V CE(SAT)

V BE(SAT)

h FE

f T

C ob

C ib

♦ Enhanced specification

ENHANCED SPECIFICATION

NPN SILICON TRANSISTOR

SURFACE MOUNT

TEST CONDITIONS

V CB =60V

V CB =60V, T A =125°C

V CE =60V, V EB =3.0V

V EB =3.0V

I C =10µA

I C =10mA

I E =10μA

I C =150mA, I B =15mA

I C =500mA, I B =50mA

I C =150mA, I B =15mA

I C =500mA, I B =50mA

V CE =10V, I C =0.1mA

V CE =10V, I C =1.0mA

V CE =10V, I C =10mA

V CE =1.0V, I C =150mA

V CE =10V, I C =150mA

V CE =10V, I C =500mA

V CE =20V, I C =20mA, f=100MHz

V CB =10V, I E =0, f=1.0MHz

V BE =0.5V, I C =0, f=1.0MHz

SOT-23 CASE

CMPT2222AE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT2222AE

is an Enhanced version of the CMPT2222A NPN

Switching transistor in a SOT-23 surface mount

package, designed for switching applications, interface

circuit and driver circuit applications.

MARKING CODE: C1PE

FEATURED ENHANCED SPECIFICATIONS:

♦

SYMBOL

T J , T stg

V CBO

V CEO

V EBO

Θ JA

MIN

100

300

P D

6.0

0.6

I C

CBO

from 40 to 60 min. (130 TYP)

from 1.0V max to 0.5V max. (0.12V TYP)

from 75V min to 100V min. (145V TYP)

TYP

0.92

0.12

145

210

205

150

130

-65 to +150

100

600

350

357

6.0

MAX

0.15

0.50

300

1.2

2.0

8.0

w w w. c e n t r a l s e m i . c o m

R2 (1-February 2010)

UNITS

°C/W

MHz

°C

μA

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CMPT2907AE Summary of contents

Page 1

... V CB =10V =0, f=1.0MHz =0.5V =0, f=1.0MHz ♦ Enhanced specification DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface circuit and driver circuit applications. MARKING CODE: C1PE FEATURED ENHANCED SPECIFICATIONS: ♦ ...

Page 2

CMPT2222AE ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued =25°C unless otherwise noted) SYMBOL TEST CONDITIONS =10V =1.0mA, f=1.0kHz =10V =10mA, f=1.0kHz h ...

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