CMPT2222A Central Semiconductor, CMPT2222A Datasheet
CMPT2222A
Manufacturer Part Number
CMPT2222A
Description
Bipolar Small Signal NPN Gen Purpose
Manufacturer
Central Semiconductor
Datasheet
1.CMPT2222A.pdf
(2 pages)
Specifications of CMPT2222A
Dc Collector/base Gain Hfe Min
35 at 0.1 mA at 10 V
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Package / Case
SOT-23
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.6 A
Power Dissipation
350 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
3000 PCS T&R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CMPT2222ATR
Manufacturer:
CENTRAL
Quantity:
252
MAXIMUM RATINGS: (T A =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)
SYMBOL
I CBO
I CBO
I CEV
I EBO
BV CBO
BV CEO
BV EBO
V CE(SAT)
V CE(SAT)
V BE(SAT)
V BE(SAT)
h FE
h FE
h FE
h FE
h FE
h FE
f T
C ob
C ib
NPN SILICON TRANSISTOR
SURFACE MOUNT
TEST CONDITIONS
V CB =60V
V CB =60V, T A =125°C
V CE =60V, V EB =3.0V
V EB =3.0V
I C =10μA
I C =10mA
I E =10μA
I C =150mA, I B =15mA
I C =500mA, I B =50mA
I C =150mA, I B =15mA
I C =500mA, I B =50mA
V CE =10V, I C =0.1mA
V CE =10V, I C =1.0mA
V CE =10V, I C =10mA
V CE =1.0V, I C =150mA
V CE =10V, I C =150mA
V CE =10V, I C =500mA
V CE =20V, I C =20mA, f=100MHz
V CB =10V, I E =0, f=1.0MHz
V BE =0.5V, I C =0, f=1.0MHz
SOT-23 CASE
CMPT2222A
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT2222A
type is an NPN silicon transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for small signal, general
purpose and switching applications.
MARKING CODE: C1P
SYMBOL
T J , T stg
V CBO
V CEO
V EBO
Θ JA
MIN
100
300
P D
6.0
0.6
I C
75
40
35
50
75
50
40
-65 to +150
MAX
600
350
357
300
6.0
0.3
1.0
1.2
2.0
8.0
75
40
10
10
10
10
25
w w w. c e n t r a l s e m i . c o m
R5 (1-February 2010)
UNITS
UNITS
°C/W
MHz
mW
mA
nA
μA
nA
nA
pF
pF
°C
V
V
V
V
V
V
V
V
V
V
Related parts for CMPT2222A
CMPT2222A Summary of contents
Page 1
... V CE =20V =20mA, f=100MHz =10V =0, f=1.0MHz =0.5V =0, f=1.0MHz DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general purpose and switching applications. MARKING CODE: C1P SYMBOL ...
Page 2
... CMPT2222A SURFACE MOUNT NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued =25°C unless otherwise noted) SYMBOL TEST CONDITIONS =10V =1.0mA, f=1.0kHz =10V =10mA, f=1.0kHz =10V =1.0mA, f=1.0kHz =10V =10mA, f=1.0kHz =10V =1.0mA, f=1.0kHz =10V =10mA, f=1.0kHz =10V =1.0mA, f=1.0kHz =10V =10mA, f=1.0kHz rb’ =10V =20mA, f=31 ...