PN2369A Central Semiconductor, PN2369A Datasheet
PN2369A
Manufacturer Part Number
PN2369A
Description
Bipolar Small Signal NPN Fast SW SS
Manufacturer
Central Semiconductor
Datasheet
1.PN2369A.pdf
(2 pages)
Specifications of PN2369A
Dc Collector/base Gain Hfe Min
40 at 10 mA at 0.35 V
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Package / Case
TO-92
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
4.5 V
Continuous Collector Current
0.45 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
625 mW
Maximum Operating Frequency
500 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PN2369A
Manufacturer:
FSC
Quantity:
10 185
Part Number:
PN2369A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
MAXIMUM RATINGS:
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Power Dissipation (T C =25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)
SYMBOL
I CBO
I CBO
BV CBO
BV CES
BV CEO
BV EBO
V CE(SAT)
V CE(SAT)
V CE(SAT)
V CE(SAT)
V BE(SAT)
V BE(SAT)
V BE(SAT)
h FE
h FE
h FE
h FE
NPN SILICON TRANSISTOR
TEST CONDITIONS
V CB =20V
V CB =20V, T A =150°C
I C =10µA
I C =10µA
I C =10mA
I E =10µA
I C =10mA, I B =1.0mA
I C =10mA, I B =1.0mA, T A =125°C
I C =30mA, I B =3.0mA
I C =100mA, I B =10mA
I C =10mA, I B =1.0mA
I C =30mA, I B =3.0mA
I C =100mA, I B =10mA
V CE =0.35V, I C =10mA
V CE =0.35V, I C =10mA, T A =–55°C
V CE =0.4V, I C =30mA
V CE =1.0V, I C =100mA
TO-18 CASE
2N2369A
(T A =25°C)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2369A is an
epitaxial planar NPN Silicon Transistor designed for
ultra high speed saturated switching applications.
MARKING: FULL PART NUMBER
SYMBOL
T J , T stg
V CBO
V CEO
V EBO
V CES
Θ JC
I CM
Θ JA
MIN
700
P D
P D
4.5
40
40
15
40
20
30
20
I C
-65 to +200
MAX
1.15
200
500
360
300
486
146
400
200
250
500
850
120
4.5
1.2
1.6
40
40
15
30
w w w. c e n t r a l s e m i . c o m
R0 (10-March 2011)
UNITS
UNITS
°C/W
°C/W
mW
mA
mA
mV
mV
mV
mV
mV
°C
nA
µA
W
V
V
V
V
V
V
V
V
V
V
Related parts for PN2369A
PN2369A Summary of contents
Page 1
... I C =100mA =10mA =0.35V =10mA =0.35V =10mA =–55° =0.4V =30mA =1.0V =100mA DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2369A is an epitaxial planar NPN Silicon Transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER SYMBOL V CBO 40 V CES 40 V CEO 15 V EBO 4 ...
Page 2
NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued =25°C unless otherwise noted) SYMBOL TEST CONDITIONS =10V =10mA, f=100MHz =5.0V =0, f=140kHz =3.0V, ...