2SC6026CT-GR Toshiba, 2SC6026CT-GR Datasheet

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2SC6026CT-GR

Manufacturer Part Number
2SC6026CT-GR
Description
Bipolar Small Signal 100mA 50V
Manufacturer
Toshiba
Datasheet

Specifications of 2SC6026CT-GR

Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
60 MHz
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Package / Case
2-1E1A
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
100 mA
Power Dissipation
50 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
General-Purpose Amplifier Applications
Maximum Ratings
Electrical Characteristics
Marking
High voltage and high current
Excellent h
High h
Complementary to 2SA2154
Lead (Pb) free
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Note: h
FE
( ) marking symbol
FE
7F
FE
Characteristic
Characteristic
classification Y (F): 120~240, GR (H): 200~400
linearity : h
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Type Name
h
: V
FE
(Ta = 25°C)
:
h
CEO
Rank
FE
FE
= 120~400
(I
= 50 V, I
C
= 0.1 mA)/h
(Ta = 25°C)
h
V
FE
C
Symbol
Symbol
V
V
V
CE (sat)
I
I
T
= 100 mA (max)
C
CBO
EBO
P
CBO
CEO
EBO
I
I
T
(Note)
f
stg
C
B
T
ob
C
j
2SC6026
FE
(I
C
V
V
V
I
V
V
C
= 2 mA) = 0.95 (typ.)
CB
EB
CE
CE
CB
= 100 mA, I
−55~150
Rating
= 5 V, I
= 60 V, I
= 6 V, I
= 10 V, I
= 10 V, I
100
150
60
50
30
50
5
1
C
C
Test Condition
E
C
E
= 0
= 2 mA
B
= 0
= 1 mA
= 0, f = 1 MHz
= 10 mA
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.0006 g (typ.)
JEDEC
JEITA
TOSHIBA
fSM
Min
120
60
1
2
0.1±0.05
Typ.
0.95
0.8±0.05
0.1
1.0±0.05
1.BASE
2.EMITTER
3.COLLECTOR
2-1E1A
2005-03-23
2SC6026
Max
0.25
400
0.1
0.1
3
Unit: mm
0.1±0.05
MHz
Unit
µA
µA
pF
V

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2SC6026CT-GR Summary of contents

Page 1

... TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications • High voltage and high current : CEO • Excellent h linearity : 0.1 mA)/ • High 120~400 • Complementary to 2SA2154 • Lead (Pb) free Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage ...

Page 2

IC - VCE 120 2.0 1.5 1.0 100 0 0.2 40 IB=0.1mA 20 COMMON EMITTER Ta=25° COLLECTOR-EMITTER VOLTAGE VCE (V) VCE(sat COMMON EMITTER IC/ 0 ...

Page 3

... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...

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