SST5485-E3 Vishay, SST5485-E3 Datasheet

JFET 35V 4mA

SST5485-E3

Manufacturer Part Number
SST5485-E3
Description
JFET 35V 4mA
Manufacturer
Vishay
Datasheets

Specifications of SST5485-E3

Configuration
Single
Transistor Polarity
N-Channel
Package / Case
TO-236
Gate-source Breakdown Voltage
- 25 V
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
- 25 V
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Breakdown Voltage Vbr
-25V
Gate-source Cutoff Voltage Vgs(off) Max
-4V
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Continuous Drain Current Id
10mA
Channel Type
N
Gate-source Voltage (max)
25V
Drain-gate Voltage (max)
-25V
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
The 2N/SST5484 series consists of n-channel JFETs
designed
especially at high frequencies up to and beyond 400 MHz.
For applications information see AN102 and AN105.
S-04028—Rev. E, 04-Jun-01
Document Number: 70246
D Excellent High-Frequency Gain:
D Very Low Noise: 2.5 dB (typ) @
D Very Low Distortion
D High AC/DC Switch Off-Isolation
Part Number
2N/SST5484
2N/SST5485
2N/SST5486
Gps 13 dB (typ) @ 400 MHz – 5485/6
400 MHz – 5485/6
to
provide
V
GS(off)
–0.3 to –3
–0.5 to –4
–2 to –6
D
S
G
(V)
high-performance
TO-226AA
(TO-92)
Top View
2N5484
2N5485
2N5486
1
2
3
V
(BR)GSS
–25
–25
–25
Min (V)
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
N-Channel JFETs
amplification,
g
fs
Min (mS) I
3.5
3
4
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), packages provide low-cost options and are
available with tape-and-reel to support automated assembly
(see Packaging Information).
DSS
Min (mA)
1
4
8
D
S
*Marking Code for TO-236
1
2
SST5484 (H4)*
SST5485 (H5)*
SST5486 (H6)*
(SOT-23
Top View
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
TO-236
)
2N/SST5484 Series
2N5484
2N5485
2N5486
3
Vishay Siliconix
G
SST5484
SST5485
SST5486
www.vishay.com
7-1

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SST5485-E3 Summary of contents

Page 1

... Packaging Information). 2N/SST5484 Series Vishay Siliconix 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 D High-Frequency Amplifier/Mixer D Oscillator D Sample-and-Hold D Very Low Capacitance Switches TO-236 (SOT- Top View SST5484 (H4)* SST5485 (H5)* SST5486 (H6)* *Marking Code for TO-236 www.vishay.com 7-1 ...

Page 2

... Series Vishay Siliconix Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Parameter Symbol Static Gate-Source V (BR)GSS Breakdown Voltage Gate-Source Cutoff Voltage V GS(off) b Saturation Drain Current I DSS Gate Reverse Current I GSS c Gate Operating Current I G Gate-Source V GS(F) c Forward Voltage Dynamic ...

Page 3

... MHz 0 kHz 100 MHz 100 MHz 400 MHz 2 2N/SST5484 Series Vishay Siliconix Limits SST5484 SST5485 SST5486 Min Max Min Max Min Max Unit –25 –25 –25 –0.3 –3 –0.5 –4 –2 – –1 –1 –1 –200 –200 –200 www.vishay.com ...

Page 4

... Series Vishay Siliconix Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 20 I DSS DSS kHz 0 0 –2 –4 –6 V – Gate-Source Cutoff Voltage (V) GS(off) Gate Leakage Current 100 0 125_C 100 0 25_C 0 – Drain-Gate Voltage (V) DG Output Characteristics –2 V GS(off – Drain-Source Voltage (V) DS www ...

Page 5

... Document Number: 70246 S-04028—Rev. E, 04-Jun-01 2N/SST5484 Series Vishay Siliconix www.vishay.com 7-5 ...

Page 6

... Series Vishay Siliconix Common-Source Input Capacitance vs. Gate-Source Voltage MHz –4 –8 –12 V – Gate-Source Voltage (V) GS Input Admittance 100 T = 25_C Common Source 10 1 0.1 100 200 f – Frequency (MHz) Reverse Admittance 25_C Common Source 1 0.1 0.01 100 200 f – Frequency (MHz) www ...

Page 7

... Equivalent Input Noise Voltage vs. Frequency –3 V GS(off DSS 0 10 100 – Frequency (Hz) Document Number: 70246 S-04028—Rev. E, 04-Jun- 100 k 2N/SST5484 Series Vishay Siliconix Output Conductance vs. Drain Current V = – GS(off kHz T = –55_C A 25_C 125_C 0 – Drain Current (mA www.vishay.com 7-7 ...

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