2N3819-E3 Vishay, 2N3819-E3 Datasheet - Page 3

• Manufacturer Part Number: 2N3819-E3
• Description: JFET 25V 10mA
• Manufacturer: Vishay

Specifications of 2N3819-E3

• Configuration: Single
• Transistor Polarity: N-Channel
• Package / Case: TO-226AA
• Gate-source Breakdown Voltage: - 25 V
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 25 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Breakdown Voltage Vbr: -35V
• Gate-source Cutoff Voltage Vgs(off) Max: -8V
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 70238
S–04028—Rev. D ,04-Jun-01
100 nA
100 pA
0.1 pA
10 nA
10 pA
1 nA
1 pA
10
10
8
6
4
2
0
8
6
4
2
0
0
0
0
125_C
T
V
A
GS(off
= –55_C
T
T
V
A
A
GS
–0.4
= 125_C
= 25_C
)
2
(off)
= –2 V
V
Transfer Characteristics
V
V
DS
Output Characteristics
Gate Leakage Current
= –2 V
GS
DG
25_C
– Drain-Source Voltage (V)
– Gate-Source Voltage (V)
5 mA
– Drain-Gate Voltage (V)
–0.8
0.1 mA
4
1 mA
10
0.1 mA
–1.2
6
5 mA
I
GSS
1 mA
V
DS
@ 25_C
V
GS
= 10 V
–1.6
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
–1.4 V
I
125_C
= 0 V
GSS
8
@
_
20
10
–2
10
15
12
10
0
9
6
3
0
8
6
4
2
8
6
4
2
0
0.1
Common-Source Forward Transconductance
0
0
V
125_C
GS
V
(off)
GS
–0.6
(off)
2
= –3 V
V
V
Transfer Characteristics
GS(off)
V
Output Characteristics
DS
= –3 V
GS
T
I
A
D
– Drain-Source Voltage (V)
vs. Drain Current
– Gate-Source Voltage (V)
= –55_C
– Drain Current (mA)
= –3 V
–1.2
4
Vishay Siliconix
25_C
25_C
1
–1.8
6
T
A
V
f = 1 kHz
V
= –55_C
DS
DS
125_C
V
2N3819
GS
www.vishay.com
= 10 V
= 10 V
–2.4
8
= 0 V
–0.3 V
–0.6 V
–0.9 V
–1.2 V
–1.5 V
–1.8 V
10
–3
10
7-3