FDPF5N60NZ Fairchild Semiconductor, FDPF5N60NZ Datasheet - Page 6

• Manufacturer Part Number: FDPF5N60NZ
• Description: MOSFET Power 600V, N-Channel MOSFET, UniFET-II
• Manufacturer: Fairchild Semiconductor

Specifications of FDPF5N60NZ

• Gate Charge Qg: 10 nC
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.65 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 2.7 A, 4.5 A
• Power Dissipation: 33 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP5N60NZ / FDPF5N60NZ Rev. A
( Driver )
( Driver )
( DUT )
( DUT )
( DUT )
( DUT )
V
V
I
I
V
V
GS
GS
SD
SD
DS
DS
V
V
GS
GS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
R
R
G
G
Driver
Driver
DUT
DUT
I
I
FM
FM
I
I
D =
D =
D =
SD
SD
, Body Diode Forward Current
, Body Diode Forward Current
Forward Voltage Drop
Forward Voltage Drop
--------------------------
--------------------------
--------------------------
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
Body Diode
Body Diode
Same Type
Same Type
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
V
V
as DUT
as DUT
+
+
_
_
DS
DS
• dv/dt controlled by R
• dv/dt controlled by R
• I
• I
V
V
SD
SD
SD
SD
Body Diode Reverse Current
Body Diode Reverse Current
controlled by pulse period
controlled by pulse period
6
I
I
RM
RM
L
L L
G
G
di/dt
di/dt
V
V
V
V
10V
10V
DD
DD
DD
DD
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