SI7868ADP-T1-E3 Vishay, SI7868ADP-T1-E3 Datasheet

MOSFET Power 20V 40A 83W

SI7868ADP-T1-E3

Manufacturer Part Number
SI7868ADP-T1-E3
Description
MOSFET Power 20V 40A 83W
Manufacturer
Vishay
Datasheet

Specifications of SI7868ADP-T1-E3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.00225 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
150 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
35 A
Power Dissipation
5400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SO
Continuous Drain Current Id
40A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
2.75mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Power Dissipation Pd
5.4W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7868ADP-T1-E3
Manufacturer:
VISHA
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 73384
S-80438-Rev. B, 03-Mar-08
Ordering Information: Si7868ADP-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
20
(V)
8
6.15 mm
D
7
C
D
= 25 °C.
0.00275 at V
0.00225 at V
6
D
PowerPAK SO-8
Si7868ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
5
R
h
Bottom View
ttp://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
DS(on)
D
GS
GS
(Ω)
1
J
S
= 150 °C)
= 4.5 V
= 10 V
b, f
2
S
N-Channel 20-V (D-S) MOSFET
3
S
5.15 mm
4
G
I
D
40
40
(A)
a
d, e
A
= 25 °C, unless otherwise noted
Q
Steady State
g
46 nC
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free available
• TrenchFET
• Low R
• PWM (Q
• 100 % R
• Low Output Voltage Synchronous Rectifier
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJC
thJA
GS
DS
AS
D
S
D
stg
DS(on)
gd
g
Tested
®
and R
Power MOSFET
Typical
1.0
18
g
) Optimized
- 55 to 150
4.9
5.4
3.4
Limit
35
28
± 16
260
20
40
32
70
40
30
45
83
53
b, c
b, c
b, c
b, c
b, c
Maximum
1.5
23
Vishay Siliconix
Si7868ADP
G
N-Channel MOSFET
www.vishay.com
°C/W
Unit
D
S
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

Related parts for SI7868ADP-T1-E3

SI7868ADP-T1-E3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7868ADP-T1-E3 (Lead (Pb)-free) Si7868ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single-Pulse Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si7868ADP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 73384 S-80438-Rev. B, 03-Mar- thru 2 V 0.6 0.8 1 100 Si7868ADP Vishay Siliconix 1.2 1.0 0.8 0.6 0 125 °C C 0.2 25 °C 0.0 0 0.25 0.50 0.75 1.00 1.25 1. Gate-to-Source Voltage (V) GS Transfer Characteristics 7500 C 6000 4500 ...

Page 4

... Si7868ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.3 0.1 - 0.1 - 0.3 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C 0.8 1.0 1 250 µ 100 125 150 ...

Page 5

... Package Limited 100 T - Case Temperature (°C) C Current Derating* 100 125 150 = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si7868ADP Vishay Siliconix 125 150 2.5 2.0 1.5 1.0 0.5 0 100 T - Case Temperature (°C) C Power, Junction-to-Ambient www ...

Page 6

... Si7868ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords