ZXMN3G32DN8TA Diodes Inc, ZXMN3G32DN8TA Datasheet

MOSFET Power 30V Dual N-Channel Enhance. Mode MOSFET

ZXMN3G32DN8TA

Manufacturer Part Number
ZXMN3G32DN8TA
Description
MOSFET Power 30V Dual N-Channel Enhance. Mode MOSFET
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXMN3G32DN8TA

Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.028 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.1 A
Power Dissipation
2100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN3G32DN8TA
Manufacturer:
ZETEX
Quantity:
20 000
Company:
Part Number:
ZXMN3G32DN8TA
Quantity:
22 000
ZXMN3G32DN8
30V SO8 dual N-channel enhancement mode MOSFET
Summary
Description
This new generation Trench MOSFET from Zetex features low on-
resistance and fast switching speed.
Features
Applications
Ordering information
Device marking
ZXMN
3G32D
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
DEVICE
ZXMN3G32DN8TA
V
Low on-resistance
4.5V gate drive capability
Fast switching bullet
DC-DC Converters
Power management functions
Motor Control
Backlighting
(BR)DSS
30
0.045 @ V
0.028 @ V
R
DS(on)
GS
GS
Reel size
(inches)
(Ω)
= 4.5V
= 10V
7
Tape width
I
D
(mm)
7.1
5.6
(A)
12
1
Quantity
per reel
500
G1
D1
S1
G2
G1
S2
S1
G2
www.zetex.com
D2
S2
D1
D1
D2
D2

Related parts for ZXMN3G32DN8TA

ZXMN3G32DN8TA Summary of contents

Page 1

... Fast switching bullet Applications • DC-DC Converters • Power management functions • Motor Control • Backlighting Ordering information DEVICE Reel size (inches) ZXMN3G32DN8TA Device marking ZXMN 3G32D Issue 1 - January 2008 © Zetex Semiconductors plc 2008 I (A) D 7.1 5.6 Tape width Quantity (mm) ...

Page 2

Absolute maximum ratings Parameter Drain source voltage Gate source voltage Continous Drain Current @ (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C A Linear ...

Page 3

Thermal characteristics Issue 1 - January 2008 © Zetex Semiconductors plc 2008 ZXMN3G32DN8 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source (*) On-State Resistance Forward (*)(†) Transconductance (†) Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance (‡)(†) Switching Turn-On-Delay Time ...

Page 5

Typical characteristics Issue 1 - January 2008 © Zetex Semiconductors plc 2008 ZXMN3G32DN8 5 www.zetex.com ...

Page 6

Test circuits Issue 1 - January 2008 © Zetex Semiconductors plc 2008 ZXMN3G32DN8 6 www.zetex.com ...

Page 7

Package outline - SO8 DIM Inches Min. Max. A 0.053 0.069 A1 0.004 0.010 D 0.189 0.197 H 0.228 0.244 E 0.150 0.157 L 0.016 0.050 Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue 1 ...

Page 8

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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