SUD45P03-10-E3 Vishay, SUD45P03-10-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD45P03-10-E3
• Description: MOSFET Power 30V 15A 70W
• Manufacturer: Vishay

Specifications of SUD45P03-10-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.01 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 4000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: -15A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 10mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70766
S-81734-Rev. E, 04-Aug-08
8000
6000
4000
2000
250
200
150
100
50
80
60
40
20
0
0
0
0
0
0
C
rss
5
10
2
V
V
C
DS
C
DS
Output Characteristics
oss
iss
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Transconductance
V
10
GS
I
D
Capacitance
- Drain Current (A)
= 10, 9, 8, 7 V
20
4
15
30
6
20
T
C
40
8
= - 55 °C
25
125 °C
25 °C
6 V
5 V
4 V
3 V
10
50
30
0.05
0.04
0.03
0.02
0.01
0.00
100
80
60
40
20
20
16
12
0
8
4
0
0
0
0
V
I
D
On-Resistance vs. Drain Current
DS
20
= 45 A
1
V
V
= 15 V
GS
30
Transfer Characteristics
GS
Q
= 4.5 V
g
- Gate-to-Source Voltage (V)
- Total Gate Charge (nC)
I
D
- Drain Current (A)
Gate Charge
40
2
T
25 °C
C
SUD45P03-10
60
= 125 °C
Vishay Siliconix
60
3
V
GS
www.vishay.com
90
- 55 °C
= 10 V
80
4
100
120
5
3