VND5N07-E STMicroelectronics, VND5N07-E Datasheet - Page 19

• Manufacturer Part Number: VND5N07-E
• Description: MOSFET Power N-Ch 70V 5A OmniFET
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VND5N07-E

• Minimum Operating Temperature: - 40 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 70 V
• Continuous Drain Current: 5 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 200 mOhm
• Current - Output / Channel: -
• Current - Peak Output: 5A
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

VND5N07
Table 10.
Package weight
Dim.
C2
D1
A1
A2
B2
E1
L2
L4
V2
G
A
B
C
D
E
H
R
e
DPAK mechanical data
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.60
0°
Gr. 0.29
Typ.
2.28
Package and packing information
mm
5.1
4.7
0.8
0.2
8°
10.10
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
1.00
19/24