ZVN2120GTA Diodes Inc, ZVN2120GTA Datasheet
ZVN2120GTA
Manufacturer Part Number
ZVN2120GTA
Description
MOSFET Power N-Chnl 200V
Manufacturer
Diodes Inc
Datasheet
1.ZVN2120GTA.pdf
(3 pages)
Specifications of ZVN2120GTA
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
10 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.32 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZVN2120GTA
Manufacturer:
Diodes/Zetex
Quantity:
1 847
Part Number:
ZVN2120GTA
Manufacturer:
DIODES/美台
Quantity:
20 000
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 - FEBRUARY 1996
FEATURES:
*
*
PARTMARKING DETAIL - ZVN2120
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold Voltage V
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2) g
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2) C
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
V
R
DS
DS(ON)
- 200V
- 10
amb
=25°C
amb
BV
C
t
SYMBOL MIN.
I
I
I
R
C
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
=25°C
GS(th)
DS(on)
iss
oss
rss
DSS
200
1
500
100
3 - 390
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
3
20
10
100
10
85
20
7
8
8
20
12
stg
V
V
nA
mA
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
V
V
V
T=125°C
V
V
V
V
V
D
D
GS
DS
DS
DS
GS
DS
DS
DD
=1mA, V
=1mA, V
-55 to +150
= 20V, V
=200V, V
=160V, V
=25V, V
=10V, I
=25V, I
=25V, V
VALUE
25V, I
200
320
ZVN2120G
2
2
20
(2)
D
GS
DS
D
D
D
GS
GS
=250mA
=250mA
=250mA
=0V
GS
GS
= V
DS
=10V
=0V, f=1MHz
=0V
=0V,
=0V
GS
G
UNIT
mA
°C
W
A
V
V
D
S
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ZVN2120GTA Summary of contents
Page 1
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - FEBRUARY 1996 FEATURES 200V DS(ON) PARTMARKING DETAIL - ZVN2120 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T Pulsed Drain ...
Page 2
TYPICAL CHARACTERISTICS 2.0 V GS= 1.6 1.2 0.8 0 Drain Source Voltage (Volts Output Characteristics Gate Source Voltage (Volts) GS- Voltage ...
Page 3
ZVN2120G TYPICAL CHARACTERISTICS 500 400 300 V 25V DS= 200 100 0 0.2 0.6 0.8 1.0 1.2 0 Drain Current (Amps) D(on) Transconductance v drain current 100 -Drain ...