SI4842BDY-T1-E3 Vishay, SI4842BDY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4842BDY-T1-E3
• Description: MOSFET Power 30V 23A 3.5W
• Manufacturer: Vishay

Specifications of SI4842BDY-T1-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0057 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 28 A
• Power Dissipation: 6250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 28A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 5.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.4V
• Power Dissipation Pd: 6.25W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73532
S09-0228-Rev. C, 09-Feb-09
8.0
6.4
4.8
3.2
1.6
0.0
0
25
D
Power, Junction-to-Foot
is based on T
T
C
- Case Temperature (°C)
50
75
J(max)
35
28
21
14
7
0
0
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
25
125
T
C
50
- Case Temperature (°C)
Current Derating*
150
75
100
2.0
1.6
1.2
0.8
0.4
0.0
125
0
150
25
Power, Junction-to-Ambient
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
Si4842BDY
100
www.vishay.com
125
150
5