ZXM66P02N8TA Diodes Inc, ZXM66P02N8TA Datasheet

MOSFET Power 20V P-Chnl HDMOS

ZXM66P02N8TA

Manufacturer Part Number
ZXM66P02N8TA
Description
MOSFET Power 20V P-Chnl HDMOS
Manufacturer
Diodes Inc
Datasheet
1.ZXM66P02N8TA.pdf (5 pages)

Specifications of ZXM66P02N8TA

Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.025 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
8 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
ZXM66P02N8TA
Manufacturer:
ZETEX
Quantity:
20 000
Ordering Information
Marking Information
Product Summary
Description and Applications
This high density MOSFET utilizes a unique structure that combines
the benefits of a low on-resistance with fast switching speed. This
makes it ideal for high efficiency, low voltage power management
applications. Compared to trenchFET technology, this MOSFET
structure has an intrinsically higher pulse current handling capability
in linear mode.
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Notes:
ZXM66P02N8
Document Number DS31965 Rev. 2 - 2
Inrush protection circuits
DC-DC Converters
Power management functions
Disconnect switches
Motor control
ZXM66P02N8TA
V
(BR)DSS
-20V
Product
1. For packaging details, go to our website.
Top View
SO-8
R
0.025Ω
DS(on)
(Note 1)
See below
Marking
YYWW
66P02
ZXM
20V P-CHANNEL ENHANCEMENT MODE MOSFET
-8.0A
I
D
Reel size (inches)
www.diodes.com
ZXM = Product Type Marking Code, Line 1
66P02 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
Top View
1 of 5
7
Features and Benefits
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Mechanical Data
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Please click here to visit our online spice models database.
High pulse current handling in linear mode
Low on-resistance
Fast switching speed
Low gate drive
Low profile SOIC package
Case: SO-8
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See diagram below
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
Tape width (mm)
Diodes Incorporated
A Product Line of
12
G
Equivalent Circuit
D
S
Quantity per reel
ZXM66P02N8
© Diodes Incorporated
500
October 2009

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ZXM66P02N8TA Summary of contents

Page 1

... Motor control SO-8 Top View Ordering Information (Note 1) Product Marking ZXM66P02N8TA See below Notes: 1. For packaging details our website. Marking Information ZXM66P02N8 Document Number DS31965 Rev 20V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. ...

Page 2

... 0.025 V = -4.5V -3. Ω 0.045 V = -2.5V -2. ⎯ -10V -3. 0. -3.2A ⎯ -3.2A, di/dt = 100A/μs F ⎯ nC ⎯ -15V ⎯ 1MHz ⎯ pF ⎯ -4.5V -10V ⎯ -3.2A D ⎯ nC ⎯ ns ⎯ -10V - ⎯ -3.2A 6.0Ω ⎯ ns October 2009 © Diodes Incorporated ...

Page 3

... Source-Drain Diode Forward Voltage www.diodes.com A Product Line of Diodes Incorporated ZXM66P02N8 4. 150°C 10V 2. Drain-Source Voltage (V) DS Output Characteristics V = -4. 3. DS(on) V GS(th -250uA 100 150 T = 150° 25°C 0.4 0.6 0.8 1.0 Source-Drain Voltage (V) SD October 2009 © Diodes Incorporated ...

Page 4

... A Product Line of Diodes Incorporated ZXM66P02N8 θ Inches Millimeters Max. Min. Max. Min. 0.050 BSC 1.27 BSC 0.51 0.013 0.020 0.33 0.25 0.008 0.010 0.19 8° 0° 8° 0° 0.50 0.010 0.020 0. 4.0 1.27 0.050 mm inches © Diodes Incorporated October 2009 ...

Page 5

... Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. ...

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