SUP65P04-15-E3 Vishay, SUP65P04-15-E3 Datasheet - Page 4

• Manufacturer Part Number: SUP65P04-15-E3
• Description: MOSFET Power 40V 65A 120W
• Manufacturer: Vishay

Specifications of SUP65P04-15-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.015 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Continuous Drain Current Id: -65A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 15mohm
• Rds(on) Test Voltage Vgs: -10V
• Power Dissipation Pd: 3.75W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SUP/SUB65P04-15
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4
1000
2.0
1.5
1.0
0.5
100
0.00001
0.1
10
0
–50
1
V
I
–25
On-Resistance vs. Junction Temperature
I
D
AV
GS
= 30 A
0.0001
(A) @ T
= 10 V
T
0
Avalanche Current vs. Time
J
– Junction Temperature ( C)
A
25
= 150 C
0.001
50
t
in
I
(Sec)
AV
75
(A) @ T
0.01
100
A
= 25 C
125
0.1
150
175
1
New Product
100
10
60
55
50
45
40
35
1
–50
0
–25
Source-Drain Diode Forward Voltage
I
D
= 250 A
V
T
0
SD
0.3
Drain Source Breakdown vs.
J
– Junction Temperature ( C)
– Source-to-Drain Voltage (V)
T
Junction Temperature
25
J
= 150 C
50
0.6
75
S-00831—Rev. A, 01-May-00
Document Number: 71174
100
T
J
= 25 C
0.9
125
150
175
1.2