IRF9Z24SPBF Vishay, IRF9Z24SPBF Datasheet - Page 6

• Manufacturer Part Number: IRF9Z24SPBF
• Description: MOSFET Power P-Chan 60V 11 Amp
• Manufacturer: Vishay

Specifications of IRF9Z24SPBF

• Transistor Polarity: P-Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: -10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Voltage Vgs Max: 20V
• Transistor Case Style: D2-PAK
• Threshold Voltage Vgs Typ: -4V
• Rohs Compliant: Yes
• Fall Time: 29 ns
• Rise Time: 68 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
Vishay Siliconix
www.vishay.com
6
- 10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
91091_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
800
600
400
200
0
25
V
DD
Starting T
= - 25 V
50
J
, Junction Temperature (°C)
75
100
125
Top
Bottom
12 V
150
Fig. 13b - Gate Charge Test Circuit
V
GS
- 4.5 A
- 7.8 A
- 11 A
Same type as D.U.T.
Current regulator
I
D
0.2 µF
175
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
I
G
S10-1728-Rev. B, 02-Aug-10
Document Number: 91091
D.U.T.
I
D
+
-
V
DS