SUP75N06-08-E3 Vishay, SUP75N06-08-E3 Datasheet
SUP75N06-08-E3
Specifications of SUP75N06-08-E3
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SUP75N06-08-E3 Summary of contents
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... N-Channel 60-V (D-S), 175_C MOSFET V (V) r (W) (BR)DSS DS(on) 60 0.008 TO-220AB DRAIN connected to TAB Top View SUP75N06-08 Parameter Gate-Source Voltage Continuous Drain Current Continuous Drain Current (T = 175_C) J Pulsed Drain Current Avalanche Current b Repetitive Avalanche Energy Power Dissipation Operating Junction and Storage Temperature Range ...
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... Forward Voltage Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Notes Pulse test: pulse width v 300 msec, duty cycle v 2 Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Symbol Test Condition = 250 (BR)DSS 250 mA ...
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... C oss C 1000 rss – Drain-to-Source Voltage (V) DS Document Number: 70283 S-05111—Rev. F, 10-Dec- 25_C 125_C 80 100 C iss SUP/SUB75N06-08 Vishay Siliconix Transfer Characteristics 200 150 100 T = 125_C 50 C 25_C – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current 0.010 0.008 0.006 0.004 0.002 ...
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... T – Case Temperature (_C) C Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –5 – www.vishay.com S FaxBack 408-970-5600 2-4 _ 100 125 150 175 500 100 10 1 125 150 175 0.1 –3 – ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...