SIHF12N50C-E3 Vishay, SIHF12N50C-E3 Datasheet
SIHF12N50C-E3
Specifications of SIHF12N50C-E3
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SIHF12N50C-E3 Summary of contents
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... Compliant to RoHS Directive 2002/95/ N-Channel MOSFET 2 D PAK (TO-263) SiHB12N50C- °C, unless otherwise noted) C SYMBOL ° 100 ° for Ω Vishay Siliconix TO-220 FULLPAK SiHF12N50C-E3 LIMIT TO220-AB TO-220 2 D PAK (TO-263) FULLPAK V 500 DS V ± 7 1.67 0.28 E 180 AS P 208 150 J ...
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... SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) a Junction-to-Ambient (PCB mount) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage (N) ...
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... J TOP 9.0 V 8.0 V 7 BOTTOM 5 Drain-to-Source Voltage (V) DS Fig Typical Output Characteristics (TO-220) Document Number: 91388 S10-0969-Rev. B, 26-Apr-10 SiHP12N50C, SiHB12N50C, SiHF12N50C Fig Normalized On-Resistance vs. Temperature Vishay Siliconix ° 150 ° Gate-to-Source Voltage (V) GS Fig Typical Transfer Characteristics ...
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... SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix 2400 1MHz iss gs 2000 rss oss ds 1600 1200 800 C oss 400 C rss Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage Fig Maximum Safe Operating Area (TO-220 FULLPAK) www ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-220AB 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse (Thermal Response) 0.001 -4 10 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-220 FULLPAK) Document Number: 91388 S10-0969-Rev. B, 26-Apr-10 SiHP12N50C, SiHB12N50C, SiHF12N50C + Rectangular Pulse Duration ( 0.1 ...
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... SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix D.U. 0.01 Ω Fig. 13a - Unclamped Inductive Test Circuit Fig. 13b - Unclamped Inductive Waveforms www.vishay.com Driver + - Charge Fig. 14a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µF D.U. Current sampling resistors Fig ...
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... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91388. Document Number: 91388 S10-0969-Rev. B, 26-Apr-10 SiHP12N50C, SiHB12N50C, SiHF12N50C Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations D.U.T. ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...