FDS6675BZ Fairchild Semiconductor, FDS6675BZ Datasheet - Page 2

• Manufacturer Part Number: FDS6675BZ
• Description: MOSFET Power -30V P-Channel PwrTrch MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDS6675BZ

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.013 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 34 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 11 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDS6675BZ Rev.B2
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test:Pulse Width <300 us, Duty Cycle < 2.0%
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
B
∆B
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
rr
DS(on)
FS
VDSS
GS(th)
SD
iss
oss
rss
∆T
∆T
g
g
gs
gd
rr
drain pins. R
Symbol
VDSS
θJA
GS(th)
Scale 1 : 1 on letter size paper
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
θJC
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain Charge
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge
is guaranteed by design while R
(Note 2)
a) 50°C/W when
mounted on a 1 in
pad of 2 oz copper
Parameter
(Note 2)
θCA
T
is determined by the user’s board design.
J
2
= 25°C unless otherwise noted
I
I
25°C
V
V
V
I
25°C
V
V
V
T
V
V
f = 1MHz
V
V
V
I
V
I
I
D
D
D
D
I
F
F
J
D
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
DS
GS
= -11A
= -11A, di/dt = 100A/µs
= -11A, di/dt = 100A/µs
= -250µA, V
= -250µA, referenced to
= -250µA, referenced to
= 125
= -11A
= -5V,
= -15V, V
= -15V, V
= -24V, V
= -15V, V
= 0V, I
= ±25V, V
= V
= -10V , I
= -4.5V, I
= -10V, I
= -15V, I
= -10V, R
2
Test Conditions
DS
b)105°C/W when
mounted on a .04 in
pad of 2 oz copper
o
C
, I
S
= -2.1A
D
D
D
I
D
GS
GS
D
GS
D
GS
GS
GS
DS
= -11A
= -11A
= -250µA
= -9A
= -11A
= -11A
= -10V,
= -5V,
= 0V
= 0V,
= 6Ω
= 0V
= 0V
2
Min
-30
-1
1855
15.7
10.8
17.4
15.0
11.4
Typ
335
330
120
-0.7
-20
3.0
7.8
7.2
34
60
44
25
-2
minimun pad
c) 125°C/W when
mounted on a
www.fairchildsemi.com
2470
Max
13.0
21.8
18.8
±10
450
500
200
100
-1.2
10
16
62
35
42
30
-1
-3
mV/°C
mV/°C
Units
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
V
S
V