ZXMC3A16DN8TA Diodes Inc, ZXMC3A16DN8TA Datasheet - Page 8

• Manufacturer Part Number: ZXMC3A16DN8TA
• Description: MOSFET Power N and P Channel
• Manufacturer: Diodes Inc

Specifications of ZXMC3A16DN8TA

• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.4 A @ N Channel or 5.5 A @ P Channel
• Power Dissipation: 2100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ZXMC3A16DN8
0.01
Typical Transfer Characteristics
0.01
100
0.1
0.1
0.1
10
10
10
0.01
1
1
1
1
On-Resistance v Drain Current
T = 25°C
0.1
-V
-V
T = 150°C
DS
Output Characteristics
GS
-I
0.1
Drain-Source Voltage (V)
D
Gate-Source Voltage (V)
1.5V
Drain Current (A)
2
-V
10V
1
GS
P-CHANNEL TYPICAL CHARACTERISTICS
1
2V
T = 25°C
4V
-V
2.5V
DS
T = 25°C
= 10V
10
10
3.5V
3
3V
2.5V
2V
1.5V
3V
10V
3.5V
-V
4V
GS
8
0.01
0.01
100
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
Source-Drain Diode Forward Voltage
10
10
1
1
-50
0.0
Normalised Curves v Temperature
T = 150°C
0.1
-V
Tj Junction Temperature (°C)
-V
0.2
Output Characteristics
DS
SD
0
Drain-Source Voltage (V)
Source-Drain Voltage (V)
0.4
T = 150°C
10V
V
I
0.6
1
V
I
D
D
GS
GS
= -250uA
= -4.2A
50
= V
= -10V
ISSUE 1 - OCTOBER 2005
DS
0.8
4V
T = 25°C
100
1.0
10
R
3.5V
V
DS(on)
GS(th)
3V
2.5V
2V
1.5V
-V
1.2
GS
150