SUD15N06-90L-E3 Vishay, SUD15N06-90L-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD15N06-90L-E3
• Description: MOSFET Power 60V 15A 37W
• Manufacturer: Vishay

Specifications of SUD15N06-90L-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.065 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: 15A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 71087
S-50281—Rev. E, 21-Feb-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1000
800
600
400
200
50
40
30
20
10
25
20
15
10
0
5
0
0
0
0
0
C
rss
10
2
V
4
V
DS
DS
Output Characteristics
− Drain-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
I
Transconductance
D
20
− Drain Current (A)
Capacitance
4
8
C
30
oss
V
GS
12
6
= 10 thru 6 V
40
T
C
C
16
= −55_C
8
5 V
4 V
3 V
iss
50
125_C
25_C
10
20
60
0.10
0.08
0.06
0.04
0.02
0.00
20
16
12
20
16
12
8
4
0
8
4
0
0
0
0
V
I
D
V
DS
= 15 A
GS
On-Resistance vs. Drain Current
= 30 V
4
= 4.5 V
1
V
4
GS
Q
Transfer Characteristics
g
− Gate-to-Source Voltage (V)
I
25_C
D
− Total Gate Charge (nC)
T
8
C
− Drain Current (A)
Gate Charge
= 125_C
SUD15N06-90L
2
8
Vishay Siliconix
12
12
3
16
V
−55_C
www.vishay.com
GS
16
4
= 10 V
20
20
24
5
3