SUD50P04-15-E3 Vishay, SUD50P04-15-E3 Datasheet - Page 3
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SUD50P04-15-E3
Manufacturer Part Number
SUD50P04-15-E3
Description
MOSFET Power 40V 50A 100W
Manufacturer
Vishay
Datasheet
1.SUD50P04-15-E3.pdf
(5 pages)
Specifications of SUD50P04-15-E3
Transistor Polarity
P-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.015 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
3000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Continuous Drain Current Id
-50A
Drain Source Voltage Vds
-40V
On Resistance Rds(on)
23mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUD50P04-15-E3
Manufacturer:
VISHAY
Quantity:
112
Part Number:
SUD50P04-15-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 71176
S-00830—Rev. A, 24-Apr-00
8000
6000
4000
2000
250
200
150
100
V
50
80
60
40
20
GS
0
0
0
0
0
0
= 10, 9, 8 V
5
20
V
V
2
DS
DS
T
C
C
oss
Output Characteristics
= –55 C
– Drain-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
Transconductance
I
D
10
– Drain Current (A)
Capacitance
40
4
7 V
15
60
6
C
20
rss
80
C
8
125 C
iss
25
2, 3 V
25 C
6 V
5 V
4 V
100
10
30
New Product
0.04
0.03
0.02
0.01
100
80
60
40
20
20
16
12
0
0
8
4
0
0
0
0
V
I
D
DS
= 50 A
On-Resistance vs. Drain Current
20
1
= 20 V
V
V
GS
GS
40
Q
Transfer Characteristics
g
= 4.5 V
– Gate-to-Source Voltage (V)
I
– Total Gate Charge (nC)
www.vishay.com FaxBack 408-970-5600
D
40
2
– Drain Current (A)
Gate Charge
Vishay Siliconix
SUD50P04-15
60
80
3
T
C
= –55 C
25 C
V
GS
80
4
= 10 V
120
100
5
125 C
120
160
6
3