IXFH9N80 IXYS, IXFH9N80 Datasheet - Page 2

• Manufacturer Part Number: IXFH9N80
• Description: MOSFET Power 9 Amps 800V 0.9 Rds
• Manufacturer: IXYS

Specifications of IXFH9N80

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 180000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AD
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 9
• Rds(on), Max, Tj=25°c, (?): 0.9
• Ciss, Typ, (pf): 2600
• Qg, Typ, (nc): 85
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 179
• Rthjc, Max, (ºc/w): 0.70
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

F
DS
GS
F
S
R
GS
GS
GS
G
GS
S
D
DS
DS
DS
D25
DSS
DSS
J
J
J
J
J
J
J
J
D
D
JM
D25
D25