SIHB12N50C-E3 Vishay, SIHB12N50C-E3 Datasheet - Page 7
![MOSFET Power N-Channel 500V](/photos/16/4/160475/to263ab_sml.jpg)
SIHB12N50C-E3
Manufacturer Part Number
SIHB12N50C-E3
Description
MOSFET Power N-Channel 500V
Manufacturer
Vishay
Datasheet
1.SIHP12N50C-E3.pdf
(8 pages)
Specifications of SIHB12N50C-E3
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.46 Ohms
Forward Transconductance Gfs (max / Min)
3 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
12 A
Power Dissipation
208 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91388.
Document Number: 91388
S10-0969-Rev. B, 26-Apr-10
Re-applied
voltage
Reverse
recovery
current
+
-
R
D.U.T.
G
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
SiHP12N50C, SiHB12N50C, SiHF12N50C
Peak Diode Recovery dV/dt Test Circuit
Fig. 15 - For N-Channel
Ripple ≤ 5 %
Body diode
Period
Body diode forward
+
-
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
forward drop
• Low stray inductance
• Ground plane
• Low leakage inductance
dI/dt
current transformer
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
= 10 V*
+
-
V
DD
Vishay Siliconix
www.vishay.com
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