Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage (Note 1)
Drain Current (Note 1)
Total Power Dissipation
Derating above T
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Features
•
•
•
•
•
•
•
•
•
Notes:
2N7002A
Document number: DS31360 Rev. 4 - 2
N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1.2kV HBM
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 4)
Qualified to AEC-Q101 Standards for High Reliability
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb203 Fire Retardants.
A
= 25°C (Note 1)
ESD PROTECTED, 1.2kV
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
@T
Continuous @ 100°C
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
@ T
@ T
@ T
@ T
TOP VIEW
Continuous
Continuous
C
C
J
J
= 25°C
= 125°C
= 25°C
= 125°C
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Pulsed
www.diodes.com
Symbol
R
SOT-23
BV
V
t
t
DS (ON)
D(OFF)
I
C
D(ON)
I
C
1 of 4
GS(th)
C
g
DSS
GSS
oss
FS
DSS
iss
rss
Mechanical Data
Symbol
Symbol
T
•
•
•
•
•
•
•
•
•
J,
V
V
R
P
GSS
DSS
I
T
θ JA
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D
Min
D
1.2
STG
60
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Case: SOT-23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Copper
leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Gate
Equivalent Circuit
Typ
3.5
3.0
3.4
1.4
70
23
10
33
⎯
⎯
⎯
⎯
Gate
Protection
Diode
Max
500
±10
1.0
2.0
Drain
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6
5
Source
-55 to +150
Unit
mS
µA
μA
pF
pF
pF
ns
ns
Ω
V
V
Value
Value
±20
115
800
250
500
1.6
60
73
V
V
V
V
V
V
V
V
V
V
GS
DS
GS
DS
GS
GS
DS
DS
DD
GEN
G
= 0V, I
= 60V, V
= ±20V, V
= V
= 5.0V, I
= 10V, I
= 10V, I
= 25V, V
= 30V, I
= 10V
GS
TOP VIEW
, I
Test Condition
D
D
,
D
D
D
D
= 10μA
D
R
GS
GS
= 250μA
= 0.115A
DS
= 0.115A
= 0.115A, R
GEN
= 0.115A
= 0V
= 0V, f = 1.0MHz
= 0V
S
= 25Ω
mW/°C
© Diodes Incorporated
2N7002A
Units
Units
°C/W
mW
mA
°C
V
V
L
= 150Ω,
May 2008